AO8808AL AOSMD [Alpha & Omega Semiconductors], AO8808AL Datasheet
AO8808AL
Manufacturer Part Number
AO8808AL
Description
Dual N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
AOSMD [Alpha & Omega Semiconductors]
Datasheet
1.AO8808AL.pdf
(4 pages)
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO8808A uses advanced trench technology to
provide excellent R
operation with gate voltages as low as 1.8V while
retaining a 12V V
Standard Product AO8808A is Pb-free (meets ROHS
& Sony 259 specifications). AO8808AL is a Green
Product ordering option. AO8808A and AO8808AL
are electrically identical.
AO8808A
Dual N-Channel Enhancement Mode Field Effect Transistor
A
GS(MAX)
A
D1
S1
S1
G1
DS(ON)
B
T
T
T
T
A
A
A
A
1
2
3
4
=25°C
=70°C
=25°C
=70°C
rating. It is ESD protected.
, low gate charge and
Top View
TSSOP-8
C
A
A
A
=25°C unless otherwise noted
8
7
6
5
D2
S2
S2
G2
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
Symbol
Features
V
I
R
R
R
R
ESD Rating: 2000V HBM
R
D
R
DS
DS(ON)
DS(ON)
DS(ON)
DS(ON)
G1
θJA
θJL
= 7.9A (V
(V) = 20V
< 14mΩ (V
< 15mΩ (V
< 20mΩ (V
< 28mΩ (V
Maximum
-55 to 150
GS
±12
Typ
D1
S1
7.9
6.3
1.4
0.9
20
30
73
96
63
= 10V)
G2
GS
GS
GS
GS
= 10V)
= 4.5V)
= 2.5V)
= 1.8V)
Max
125
90
75
D2
S2
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A
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AO8808AL Summary of contents
Page 1
... DS(ON) operation with gate voltages as low as 1.8V while retaining a 12V V rating ESD protected. GS(MAX) Standard Product AO8808A is Pb-free (meets ROHS & Sony 259 specifications). AO8808AL is a Green Product ordering option. AO8808A and AO8808AL are electrically identical. TSSOP-8 Top View D1 1 ...
Page 2
AO8808A Electrical Characteristics (T =25°C unless otherwise noted) J Parameter Symbol STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS BV Gate-Source Breakdown Voltage GSO V Gate Threshold Voltage GS(th) ...
Page 3
AO8808A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 10 2. (Volts) DS Fig 1: On-Region Characteristics 30 V =1. ...
Page 4
AO8808A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =10V (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 10.0 1ms 10ms 1 =150°C 10s ...