AO8810L AOSMD [Alpha & Omega Semiconductors], AO8810L Datasheet
AO8810L
Manufacturer Part Number
AO8810L
Description
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
AOSMD [Alpha & Omega Semiconductors]
Datasheet
1.AO8810L.pdf
(4 pages)
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO8810 uses advanced trench technology to provide
excellent R
voltages as low as 1.8V. This device is suitable for use as a
load switch or in PWM applications. It is ESD protected.
AO8810L is offered in a lead-free package. Standard
Product AO8810 is Pb-free (meets ROHS & Sony 259
specifications). AO8810L is a Green Product ordering
option. AO8810 and AO8810L are electrically identical.
AO8810
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
A
D1/D2
DS(ON)
S1
S1
G1
, low gate charge and operation with gate
A
1
2
3
4
B
Top View
TSSOP-8
T
T
T
T
A
A
A
A
=25°C
=70°C
=25°C
=70°C
C
8
7
6
5
A
A
A
=25°C unless otherwise noted
D1/D2
S2
S2
G2
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
G1
Symbol
R
R
θJA
θJL
S1
D1
Features
V
I
R
R
R
ESD Rating: 2000V HBM
D
DS
DS(ON)
DS(ON)
DS(ON)
Maximum
-55 to 150
= 7 A (V
(V) = 20V
Typ
5.7
1.5
20
±8
30
64
89
53
7
1
< 20mΩ (V
< 24mΩ (V
< 32mΩ (V
G2
GS
= 4.5V)
Max
120
83
70
S2
GS
GS
GS
D2
= 4.5V)
= 2.5V)
= 1.8V)
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A
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AO8810L Summary of contents
Page 1
... DS(ON) voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications ESD protected. AO8810L is offered in a lead-free package. Standard Product AO8810 is Pb-free (meets ROHS & Sony 259 specifications). AO8810L is a Green Product ordering option. AO8810 and AO8810L are electrically identical. ...
Page 2
AO8810 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current ...
Page 3
AO8810 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS = (Volts) DS Figure 1: On-Regions Characteristi =1. Figure 3: ...
Page 4
AO8810 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =10V (nC) Figure 7: Gate-Charge Characteristics 100.0 T =150°C J(Max) T =25° DS(ON) limited 10.0 0.1s 1.0 ...