AO8818L AOSMD [Alpha & Omega Semiconductors], AO8818L Datasheet
AO8818L
Manufacturer Part Number
AO8818L
Description
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
AOSMD [Alpha & Omega Semiconductors]
Datasheet
1.AO8818L.pdf
(4 pages)
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO8818 uses advanced trench technology to
provide excellent R
operation with gate voltages as low as 2.5V while
retaining a 12V V
device is suitable for use as a uni-directional or bi-
directional load switch, facilitated by its common-drain
configuration. Standard Product AO8818 is Pb-free
(meets ROHS & Sony 259 specifications). AO8818L is
a Green Product ordering option. AO8818 and
AO8818L are electrically identical.
AO8818
Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
A
D1/D2
S1
S1
G1
GS(MAX)
A
DS(ON)
1
2
3
4
B
Top View
TSSOP-8
T
T
T
T
A
A
A
A
=25°C
=70°C
=25°C
=70°C
rating. It is ESD protected. This
, low gate charge and
C
8
7
6
5
A
A
A
=25°C unless otherwise noted
D1/D2
S2
S2
G2
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
G1
Symbol
Features
V
I
R
R
R
ESD Rating: 1500V HBM
D
R
R
DS
DS(ON)
DS(ON)
DS(ON)
θJA
= 7A (V
θJL
(V) = 30V
S1
D1
< 18mΩ (V
< 20mΩ (V
< 27mΩ (V
Maximum
-55 to 150
GS
0.96
±12
Typ
5.5
1.5
30
30
64
89
53
= 10V)
7
G2
GS
GS
GS
= 10V)
= 4.5V)
= 2.5V)
Max
120
S2
83
70
D2
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A
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AO8818L Summary of contents
Page 1
... It is ESD protected. This GS(MAX) device is suitable for use as a uni-directional or bi- directional load switch, facilitated by its common-drain configuration. Standard Product AO8818 is Pb-free (meets ROHS & Sony 259 specifications). AO8818L is a Green Product ordering option. AO8818 and AO8818L are electrically identical. TSSOP-8 Top View ...
Page 2
AO8818 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS BV Gate-Source Breakdown Voltage GSO V Gate Threshold Voltage GS(th) ...
Page 3
AO8818 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 3.5V 10V 20 V =2. (Volts) DS Figure 1: On-Regions Characteristi =2. =10V ...
Page 4
AO8818 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =15V (nC) Figure 7: Gate-Charge Characteristics 100.0 T =150°C J(Max) T =25° DS(ON) limited 100µs 10.0 0.1s 10ms ...