HY5DU561622CT-D HYNIX [Hynix Semiconductor], HY5DU561622CT-D Datasheet - Page 28

• Manufacturer Part Number: HY5DU561622CT-D
• Description: 256M-P DDR SDRAM
• Manufacturer: HYNIX [Hynix Semiconductor]

Rev. 0.3 / Oct. 2003
AC Overshoot/Undershoot Specification for Address and Control Pins
This specification is intended for devices with no clamp protection and is guaranteed by design
Overshoot/Undershoot Specification for Data, Strobe, and Mask Pins
Maximum peak amplitude allowed for overshoot (See Figure 1):
Maximum peak amplitude allowed for undershoot (See Figure 1):
The area between the overshoot signal and VDD must be less than or equal to (See Figure 1):
The area between the undershoot signal and GND must be less than or equal to (See Figure 1):
Maximum peak amplitude allowed for overshoot (See Figure 2):
Maximum peak amplitude allowed for undershoot (See Figure 2):
The area between the overshoot signal and VDD must be less than or equal to (See Figure 2):
The area between the undershoot signal and GND must be less than or equal to (See Figure 2):
Volts
(V)
Figure 1: Address and Control AC Overshoot and Undershoot Definitio
Volts
(V)
Figure 2: DQ/DM/DQS AC Overshoot and Undershoot Definition
+5
+4
+3
+2
+1
-1
-2
-3
0
+5
+4
+3
+2
+1
-1
-2
-3
0
0
Max. area=4.5V-ns
0
Max. area=2.4V-ns
1
1
Parameter
Parameter
2
2
Time(ns)
Time(ns)
3
3
Max. amplitude=1.5V
Max. amplitude=1.2V
4
4
5
5
6
6
HY5DU561622CT-D4/D43
Overshoot
Undershoot
HY5DU56422CT-D4/D43
HY5DU56822CT-D4/D43
V
Ground
Overshoot
Undershoot
DD
2.4V - ns
1.2V
1.2V
2.4V - ns
V
Ground
1.5V
1.5V
4.5V - ns
4.5V - ns
DD
DDR333
DDR333
Specification
Specification
1.5V
4.5V - ns
4.5V - ns
DDR200/266
1.5V
1.2V
1.2V
2.4V - ns
2.4V - ns
DDR200/266
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