IPB100N06S2L05ATMA1 Infineon, IPB100N06S2L05ATMA1 Datasheet

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IPB100N06S2L05ATMA1

Manufacturer Part Number
IPB100N06S2L05ATMA1
Description
Mosfet n-Ch 55v 100a To263-3
Manufacturer
Infineon
Datasheet
Rev. 1.0
OptiMOS
Features
• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Ultra low Rds(on)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
Type
IPB100N06S2L-05
IPP100N06S2L-05
Green package (lead free)
®
Power-Transistor
2)
4)
Package
PG-TO263-3-2
PG-TO220-3-1
j
=25 °C, unless otherwise specified
1)
2)
Symbol
I
I
E
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Ordering Code
SP0002-19003
SP0002-18879
stg
T
T
V
T
I
T
D
C
C
C
C
GS
= 80 A
page 1
=25 °C, V
=100 °C,
=25 °C
=25 °C
=10 V
Conditions
2)
GS
PG-TO263-3-2
Product Summary
V
R
I
Marking
PN06L05
PN06L05
D
=10 V
DS
DS(on),max
(SMD version)
-55 ... +175
Value
100
100
400
810
±20
300
PG-TO220-3-1
IPB100N06S2L-05
IPP100N06S2L-05
100
4.4
55
2006-03-13
Unit
A
mJ
V
W
°C
V
m
A

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