IPB100N06S2L05ATMA1 Infineon, IPB100N06S2L05ATMA1 Datasheet

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IPB100N06S2L05ATMA1

Manufacturer Part Number

IPB100N06S2L05ATMA1

Description

Mosfet n-Ch 55v 100a To263-3

Manufacturer

Infineon

Datasheet

1.IPB100N06S2L05ATMA1.pdf (8 pages)

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Rev. 1.0

OptiMOS

Features

• N-channel Logic Level - Enhancement mode

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

•

• Ultra low Rds(on)

• 100% Avalanche tested

Maximum ratings, at T

Parameter

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Gate source voltage

Power dissipation

Operating and storage temperature

Type

IPB100N06S2L-05

IPP100N06S2L-05

Green package (lead free)

®

Power-Transistor

2)

4)

Package

PG-TO263-3-2

PG-TO220-3-1

j

=25 °C, unless otherwise specified

1)

2)

Symbol

I

I

E

V

P

T

D

D,pulse

j

AS

GS

tot

, T

Ordering Code

SP0002-19003

SP0002-18879

stg

T

T

V

T

I

T

D

C

C

C

C

GS

= 80 A

page 1

=25 °C, V

=100 °C,

=25 °C

=25 °C

=10 V

Conditions

2)

GS

PG-TO263-3-2

Product Summary

V

R

I

Marking

PN06L05

PN06L05

D

=10 V

DS

DS(on),max

(SMD version)

-55 ... +175

Value

100

100

400

810

±20

300

PG-TO220-3-1

IPB100N06S2L-05

IPP100N06S2L-05

100

4.4

55

2006-03-13

Unit

A

mJ

V

W

°C

V

m

A

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