M24M01-DFMN6TP STMicroelectronics, M24M01-DFMN6TP Datasheet - Page 25

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M24M01-DFMN6TP

Manufacturer Part Number
M24M01-DFMN6TP
Description
EEPROM 1-Mbit I2C EEProm 256kB 1.7V to 5.5V
Manufacturer
STMicroelectronics
Datasheet

Specifications of M24M01-DFMN6TP

Rohs
yes

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M24M01-DFMN6TP
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
M24M01-DFMN6TP
Quantity:
7 500
M24M01-R M24M01-DF
Table 10.
1. Cycling performance for products identified by process letter K.
2. The Write cycle endurance is defined for groups of four data bytes located at addresses [4*N, 4*N+1,
3. A Write cycle is executed when either a Page Write, a Byte Write, a Write Identification Page or a Lock
Table 11.
1. For products identified by process letter K. The data retention behavior is checked in production. The 200-
Ncycle
Data retention
Symbol
4*N+2, 4*N+3] where N is an integer. The Write cycle endurance is defined by characterization and
qualification.
Identification Page instruction is decoded. When using the Byte Write, the Page Write or the Write
Identification Page, refer also to
year limit is defined from characterization and qualification results.
endurance
Cycling performance by groups of four bytes
Memory cell data retention
Parameter
Write cycle
(1)
Parameter
(2)
TA 25 °C, V
TA = 85 °C, V
Section 5.1.5: ECC (Error Correction Code) and Write
Doc ID 12943 Rev 10
Test condition
CC
CC
TA = 55 °C
(min) < V
(min) < V
Test condition
CC
CC
(1)
< V
< V
CC
CC
(max)
(max)
DC and AC parameters
4,000,000
1,200,000
Max.
Min.
200
cycling.
Write cycle
Unit
Year
Unit
25/38
(3)

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