IS62WV12816DBLL-45TLI-TR ISSI, IS62WV12816DBLL-45TLI-TR Datasheet

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IS62WV12816DBLL-45TLI-TR

Manufacturer Part Number
IS62WV12816DBLL-45TLI-TR
Description
SRAM 2Mb 128K x 1645ns Async SRAM
Manufacturer
ISSI
Datasheet

Specifications of IS62WV12816DBLL-45TLI-TR

Rohs
yes
Memory Size
2 Mbit
Organization
128 Kbit x 16
Access Time
45 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.5 V
Maximum Operating Current
21 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TSOP-44
Memory Type
CMOS
Factory Pack Quantity
1000
IS65WV12816DALL/DBLL
128K x 16 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
FEATURES
• High-speed access time: 35ns, 45ns, 55ns
• CMOS low power operation
• TTL compatible interface levels
• Single power supply
• Fully static operation: no clock or refresh
• Three state outputs
• Data control for upper and lower bytes
• Industrial and Autotmovie temperature support
• 2CS Option Available
• Lead-free available
FUNCTIONAL BLOCK DIAGRAM
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. B
2/4/2013
Copyright © 2013 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-
est version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
– 36 mW (typical) operating
– 9 µW (typical) CMOS standby
– 1.8V ± 10% V
– 2.5V--3.6V V
required
dd
dd
(IS62/65WV12816dBLL)
(IS62/65WV12816dALL)
Lower Byte
Upper Byte
I/O8-I/O15
I/O0-I/O7
A0-A16
VDD
GND
CS2
CS1
WE
OE
UB
LB
DECODER
CIRCUIT
CONTROL
CIRCUIT
DATA
I/O
1-800-379-4774
DESCRIPTION
The
2M bit static RAMs organized as 128K words by 16
bits. It is fabricated using
CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields high-
performance and low power consumption devices.
When CS1 is HIGH (deselected) or when CS2 is LOW
(deselected) or when CS1 is LOW, CS2 is HIGH and both
LB and UB are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory. A
data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS62/65WV12816DALL/DBLL are packaged in the
JEDEC standard 48-pin mini BGA (6mm x 8mm) and 44-
Pin TSOP (TYPE II).
ISSI
MEMORY ARRAY
COLUMN I/O
128K x 16
IS62/65WV12816DALL/DBLL are high-speed,
ISSI
FEBRUARY 2013
's high-performance
1

Related parts for IS62WV12816DBLL-45TLI-TR

IS62WV12816DBLL-45TLI-TR Summary of contents

Page 1

... Upper Byte Copyright © 2013 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat- est version of this device specification before relying on any published information and before placing orders for products ...

Page 2

... I/O15 NC 37 I/O14 36 I/O13 I/O12 GND 34 GND 33 VDD 32 I/O11 31 I/O10 30 I/ A10 24 A11 23 NC Integrated Silicon Solution, Inc. — www.issi.com CS2 A3 A4 I/O UB CS1 I I/O I I/O I GND I I/O VDD 11 3 ...

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... I/O PIN I/O8-I/O15 V Current DD High-Z High High-Z High High-Z High High-Z High High-Z High High-Z I out cc High-Z d out d d out out d High High Unit +0 °C 1.0 W IS62WV12816DBLL 2.5V - 3.6V 2.5V - 3.6V IS65WV12816DBLL 2. ...

Page 4

... I = 0.1 mA 1.8V ± 10 2.1 mA 2.5-3.6V oL 1.8V ± 10% 2.5-3.6V 1.8V ± 10% 2.5-3.6V GND ≤ V ≤ GND ≤ V ≤ Outputs Disabled out dd Conditions Max out Integrated Silicon Solution, Inc. — www.issi.com Min. Max. Unit 1.4 — V 2.2 — V — 0.2 V — 0 –0.2 0.4 V –0.2 0.6 V –1 1 µ ...

Page 5

... TTL Standby Current CS2 = VIL 1 SB (TTL Inputs 0Hz I CMOS Standby ( Current (CMOS Inputs) (2) CS1 (3) LB and UB > VDD- 0.2V Integrated Silicon Solution, Inc. — www.issi.com Rev. B 2/4/2013 = Max., Com mA Ind. mAX Auto. = Max., Com mA Ind. ...

Page 6

... CS2 V Com. OR Ind. > VDD - 0.2V, Auto. > cS2 VDD - 0.2V typ. (2) OR < 0.2V, CS1 > cS2 VDD - 0.2V f= 0Hz = 3.0V and not 100% tested Integrated Silicon Solution, Inc. — www.issi.com (1) (Over Operating Range) Max Max. Max ...

Page 7

... R1(Ω) 3070 R2(Ω) 3150 V 0.9V Ref V 1. TEST LOADS R1 VTM OUTPUT 30 pF Including jig and scope Figure 1 Integrated Silicon Solution, Inc. — www.issi.com Rev. B 2/4/2013 IS62/65WV12816DALL IS62/65WV12816DBLL (Unit) 0. -0.2V 0. 1V/1ns V ref See Figures 1 and 2 See Figures 1 and 2 2.5V - 3.6V 3070 3150 1.5V 2.8V ...

Page 8

... Integrated Silicon Solution, Inc. — www.issi.com 55 ns Min. Max. Unit 55 — ns — — ns — — — — — ...

Page 9

... ADDRESS OE CS1 CS2 DOUT Notes HIGH for a Read Cycle. 2. The device is continuously selected. OE, CS1, UB Address is valid prior to or coincident with CS1 LOW transition. Integrated Silicon Solution, Inc. — www.issi.com Rev. B 2/4/2013 , CS2 = OHA t ...

Page 10

... Integrated Silicon Solution, Inc. — www.issi.com 55 ns Min. Max. Unit 55 — — — — — — — — — ...

Page 11

... DATA UNDEFINED DIN Notes: 1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the CS1 , CS2 and WE inputs and at least one of the LB and UB inputs being in the LOW state. 2. WRITE = (CS1) [ (LB) = (UB) ] (WE). Integrated Silicon Solution, Inc. — www.issi.com Rev. B 2/4/2013 ...

Page 12

... AC WAVEFORMS WRITE CYCLE NO. 2 (WE Controlled HIGH During Write Cycle) ADDRESS OE CS1 CS2 WE LB, UB DOUT DIN SCS1 t SCS2 PWE HZWE HIGH-Z DATA UNDEFINED t SD Integrated Silicon Solution, Inc. — www.issi.com LZWE t HD DATA-IN VALID Rev. B 2/4/2013 ...

Page 13

... IS62WV12816DALL/DBLL, IS65WV12816DALL/DBLL AC WAVEFORMS WRITE CYCLE NO. 3 (WE Controlled LOW During Write Cycle) ADDRESS OE CS1 CS2 WE LB, UB DOUT DIN Integrated Silicon Solution, Inc. — www.issi.com Rev. B 2/4/2013 SCS1 t SCS2 PWE HZWE HIGH-Z DATA UNDEFINED t SD DATA-IN VALID LZWE ...

Page 14

... CS2 WE UB HZWE D OUT DATA UNDEFINED ADDRESS 1 ADDRESS PBW WORD 1 HIGH DATA IN VALID Integrated Silicon Solution, Inc. — www.issi.com PBW WORD 2 t LZWE t HD DATA IN VALID UB_CSWR4.eps Rev. B 2/4/2013 ...

Page 15

... Sdr t Recovery Time rdr Note: 1. Typical values are measured DATA RETENTION WAVEFORM VDD CS2 V DR GND Integrated Silicon Solution, Inc. — www.issi.com Rev. B 2/4/2013 Test Condition See Data Retention Waveform (min (1) 0V < CS2 < 0.2V, or (2) CS1 ≥ V – 0.2V, CS2 > ...

Page 16

... CS2 must satisfy either CS2 > Vcc -0.2V or CS2 < 0.2V 2. CS1 must satisfy either CS1 > Vcc -0.2V or CS1 < 0.2V 16 (CS1Controlled) t Data Retention Mode SDR CS1 ≥ VDD - 0.2V (UBand LB Controlled) Data Retention Mode UB and LB > VDD - 0.2V Integrated Silicon Solution, Inc. — www.issi.com t RDR t RDR Rev. B 2/4/2013 ...

Page 17

... Industrial Range: –40°C to +85°C Speed (ns) Order Part No. 55 IS62WV12816DALL-55TI IS62WV12816DALL-55BI mini BGA (6mm x 8mm) IS62WV12816DALL-55BLI mini BGA (6mm x 8mm), Lead-free IS62WV12816DALL-55B2I mini BGA (6mm x 8mm Option ORDERING INFORMATION: IS62WV12816DBLL (2.5V - 3.6V) Industrial Range: –40°C to +85°C Speed (ns) Order Part No. 35 IS62WV12816DBLL-35TLI IS62WV12816DBLL-35BLI IS62WV12816DBLL-35B2LI ...

Page 18

... IS62WV12816DALL/DBLL, IS65WV12816DALL/DBLL 18 Integrated Silicon Solution, Inc. — www.issi.com Rev. B 2/4/2013 ...

Page 19

... IS62WV12816DALL/DBLL, IS65WV12816DALL/DBLL Integrated Silicon Solution, Inc. — www.issi.com Rev. B 2/4/2013 19 ...

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