IS62WV12816DBLL-45TLI-TR ISSI, IS62WV12816DBLL-45TLI-TR Datasheet - Page 3

• Manufacturer Part Number: IS62WV12816DBLL-45TLI-TR
• Description: SRAM 2Mb 128K x 1645ns Async SRAM
• Manufacturer: ISSI

Specifications of IS62WV12816DBLL-45TLI-TR

• Rohs: yes
• Memory Size: 2 Mbit
• Organization: 128 Kbit x 16
• Access Time: 45 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.5 V
• Maximum Operating Current: 21 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-44
• Memory Type: CMOS
• Factory Pack Quantity: 1000

IS62WV12816DALL/DBLL, IS65WV12816DALL/DBLL
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
OPERATING RANGE (V
Integrated Silicon Solution, Inc. — www.issi.com
Rev. B
2/4/2013
Mode
Not Selected
Output Disabled
Read
Write
Symbol
V
t
P
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Range
Commercial
Industrial
Automotive
Stg
term
t
Ambient Temperature
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
-40°C to +125°C
–40°C to +85°C
WE
0°C to +70°C
X
X
X
H
H
H
H
H
L
L
L
DD
CS1
)
H
X
X
L
L
L
L
L
L
L
L
CS2
H
H
H
H
H
H
H
H
X
L
X
(1)
OE
H
H
X
X
X
L
L
L
X
X
X
IS62WV12816DALL
IS65WV12816DALL
LB
H
H
H
X
X
X
L
L
L
L
L
1.8V ± 10%
1.8V ± 10%
1.8V ± 10%
UB
H
H
H
X
X
X
L
L
L
L
L
–0.2 to V
–65 to +150
Value
I/O0-I/O7
1.0
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
d
d
d
d
dd
out
out
In
In
+0.3
IS62WV12816DBLL
IS65WV12816DBLL
I/O PIN
2.5V - 3.6V
2.5V - 3.6V
2.5V - 3.6V
I/O8-I/O15
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
d
d
d
d
out
out
In
In
Unit
°C
W
V
V
DD
I
I
I
SB
SB
SB
Current
1
1
1
I
I
I
I
cc
cc
cc
cc
, I
, I
, I
SB
SB
SB
2
2
2
3