M25P10-AVMP6TG NUMONYX, M25P10-AVMP6TG Datasheet - Page 41

IC FLASH 1MBIT 50MHZ 8VFQFPN

M25P10-AVMP6TG

Manufacturer Part Number
M25P10-AVMP6TG
Description
IC FLASH 1MBIT 50MHZ 8VFQFPN
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25P10-AVMP6TG

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
1M (128K x 8)
Speed
50MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VFQFN, 8-VFQFPN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M25P10-AVMP6TG
M25P10-AVMP6TGTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M25P10-AVMP6TG
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
M25P10-AVMP6TG
Manufacturer:
ST
0
Table 19.
1. Details of how to find the date of marking are given in application note, AN1995.
2. t
3. Value guaranteed by characterization, not 100% tested in production.
4. Expressed as a slew-rate.
5. Only applicable as a constraint for a WRSR instruction when SRWD is set to ‘1’.
6. It is 30 μs in devices produced with the ‘X’ and ‘Y’ process technology codes. Details of how to find the
Symbol
t
t
t
t
t
t
t
t
t
HHQX
WHSL
SHWL
CLCH
CHCL
SHQZ
HLQZ
RES1
RES2
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CHHH
HHCH
DVCH
CHDX
CHSH
SHCH
CLQV
CLQX
HLCH
CHHL
CH
SLCH
CHSL
SHSL
DP
CL
process letter on the device marking are given in the application note AN1995.
CH
f
f
C
R
(2)
(2)
(3)
(3)
(3)
+ t
(3)
(3)
(3)
(3)
(3)
(5)
(5)
CL
must be greater than or equal to 1/ f
t
t
t
t
t
Alt.
t
DSU
t
CSH
t
CLH
CSS
t
CLL
t
DIS
f
DH
t
HO
HZ
LZ
AC characteristics (40 MHz operation, device grade 6)
C
V
40 MHz available for products marked since week 20 of 2004, only
Clock frequency for the following instructions:
FAST_READ, PP, SE, BE, DP, RES, WREN,
WRDI, RDSR, WRSR
Clock frequency for READ instructions
Clock High time
Clock Low time
Clock Rise time
Clock Fall time
S Active Setup time (relative to C)
S Not Active Hold time (relative to C)
Data In Setup time
Data In Hold time
S Active Hold time (relative to C)
S Not Active Setup time (relative to C)
S Deselect time
Output Disable time
Clock Low to Output Valid
Output Hold time
HOLD Setup time (relative to C)
HOLD Hold time (relative to C)
HOLD Setup time (relative to C)
HOLD Hold time (relative to C)
HOLD to Output Low-Z
HOLD to Output High-Z
Write Protect Setup time
Write Protect Hold time
S High to Deep Power-down mode
S High to Standby mode without Read
Electronic Signature
S High to Standby mode with Read Electronic
Signature
Test conditions specified in
(4)
(4)
(peak to peak)
Parameter
(peak to peak)
C
.
Table 10
and
D.C.
D.C.
Table 12
Min
100
100
0.1
0.1
11
11
20
5
5
2
5
5
5
0
5
5
5
5
Typ
1.8 or 30
3 or 30
(1)
Max
40
20
9
9
9
9
3
(6)
(6)
MHz
MHz
V/ns
V/ns
Unit
41/51
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
μs
μs

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