CY7C1361C-133AXI Cypress Semiconductor Corp, CY7C1361C-133AXI Datasheet - Page 11

IC SRAM 9MBIT 133MHZ 100LQFP

CY7C1361C-133AXI

Manufacturer Part Number
CY7C1361C-133AXI
Description
IC SRAM 9MBIT 133MHZ 100LQFP
Manufacturer
Cypress Semiconductor Corp
Type
Synchronousr
Datasheet

Specifications of CY7C1361C-133AXI

Memory Size
9M (256K x 36)
Package / Case
100-LQFP
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Speed
133MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Access Time
6.5 ns
Maximum Clock Frequency
133 MHz
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3.135 V
Maximum Operating Current
250 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
4
Operating Supply Voltage
3.3 V
Density
9Mb
Access Time (max)
6.5ns
Sync/async
Synchronous
Architecture
SDR
Clock Freq (max)
133MHz
Operating Supply Voltage (typ)
3.3V
Address Bus
18b
Package Type
TQFP
Operating Temp Range
-40C to 85C
Supply Current
250mA
Operating Supply Voltage (min)
3.135V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
100
Word Size
36b
Number Of Words
256K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1361C-133AXI
Manufacturer:
Cypress Semiconductor
Quantity:
135
Part Number:
CY7C1361C-133AXI
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1361C-133AXIT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
ZZ Mode Electrical Characteristics
Truth Table
The Truth Table for CY7C1361C and CY7C1363C follows.
Document Number: 38-05541 Rev. *J
I
t
t
t
t
Deselected cycle, power-down
Deselected cycle, power-down
Deselected cycle, power-down
Deselected cycle, power-down
Deselected cycle, power-down
Sleep mode, power-down
Read cycle, begin burst
Read cycle, begin burst
Write cycle, begin burst
Read cycle, begin burst
Read cycle, begin burst
Read cycle, continue burst
Read cycle, continue burst
Read cycle, continue burst
Read cycle, continue burst
Write cycle, continue burst
Write cycle, continue burst
Read cycle, suspend burst
Read cycle, suspend burst
Read cycle, suspend burst
Read cycle, suspend burst
Write cycle, suspend burst
Write cycle, suspend burst
Notes
DDZZ
ZZS
ZZREC
ZZI
RZZI
5. X=”Don't Care.” H = Logic HIGH, L = Logic LOW.
6. WRITE = L when any one or more byte write enable signals and BWE = L or GW = L. WRITE = H when all byte write enable signals, BWE, GW = H.
7. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
8. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BW
9. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tri-state when OE is
Parameter
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to tri-state. OE is a
don't care for the remainder of the write cycle.
inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).
Cycle Description
Sleep mode standby current
Device operation to ZZ
ZZ recovery time
ZZ active to sleep current
ZZ Inactive to exit sleep current
Description
Address
External
External
External
External
External
Current
Current
Current
Current
Current
Current
Used
None
None
None
None
None
None
Next
Next
Next
Next
Next
Next
CE
H
X
X
X
X
H
H
X
H
X
X
H
H
X
H
L
L
L
L
L
L
L
L
1
CE
ZZ > V
ZZ > V
ZZ < 0.2 V
This parameter is sampled
This parameter is sampled
X
X
X
X
H
H
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
L
L
2
CE
X
X
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
L
L
L
L
DD
DD
[5, 6, 7, 8, 9]
3
– 0.2 V
– 0.2 V
ZZ
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
Test Conditions
ADSP
X
H
H
X
H
H
H
H
H
X
X
H
H
H
X
X
H
X
L
L
L
L
X
ADSC
H
H
H
H
H
H
H
H
H
H
H
H
X
X
X
X
X
Commercial/
L
L
L
L
L
L
Automotive
Industrial
ADV WRITE OE CLK
X
X
X
X
X
X
X
X
X
X
X
H
H
H
H
H
H
L
L
L
L
L
L
X
. Writes may occur only on subsequent clocks
CY7C1361C/CY7C1363C
H
H
H
H
H
H
X
X
X
X
X
X
X
X
H
H
H
H
2t
L
L
L
L
L
Min
CYC
0
H
H
H
H
H
H
X
X
X
X
X
X
L
X
L
L
L
X
X
L
L
X
X
2t
2t
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
Max
50
60
X
CYC
CYC
Tri-state
Tri-state
Tri-state
Tri-state
Tri-state
Tri-state
Tri-state
Tri-state
Tri-state
Tri-state
Tri-state
Tri-state
Page 11 of 34
DQ
Q
D
Q
Q
Q
D
D
Q
Q
D
D
Unit
mA
mA
ns
ns
ns
ns
[+] Feedback

Related parts for CY7C1361C-133AXI