MT47H32M8BP-37E:B TR Micron Technology Inc, MT47H32M8BP-37E:B TR Datasheet - Page 88

• Manufacturer Part Number: MT47H32M8BP-37E:B TR
• Description: IC DDR2 SDRAM 256MBIT 60FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H32M8BP-37E:B TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 256M (32M x 8)
• Speed: 3.75ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Organization: 32Mx8
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 500ps
• Maximum Clock Rate: 533MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 160mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1049-2

Figure 44: READ Latency
PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. M 7/09 EN
Notes:
DQS, DQS#
DQS, DQS#
DQS, DQS#
Command
Command
Command
Address
Address
Address
1. DO n = data-out from column n.
2. BL = 4.
3. Three subsequent elements of data-out appear in the programmed order following
4. Shown with nominal
CK#
CK#
CK#
DQ
DQ
DQ
CK
CK
CK
DO n.
Bank a,
Bank a,
Bank a,
READ
READ
READ
Col n
Col n
Col n
T0
T0
T0
AL = 1
RL = 3 (AL = 0, CL = 3)
NOP
NOP
NOP
T1
T1
T1
t
AC,
RL = 4 (AL = 1 + CL = 3)
RL = 4 (AL = 0, CL = 4)
88
t
DQSCK, and
NOP
NOP
NOP
T2
T2
T2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
CL = 3
t
DQSQ.
256Mb: x4, x8, x16 DDR2 SDRAM
NOP
NOP
NOP
T3
T3
T3
DO
n
T3n
T3n
Transitioning Data
NOP
NOP
NOP
T4
T4
T4
DO
DO
©2003 Micron Technology, Inc. All rights reserved.
n
n
T4n
T4n
T4n
T5
NOP
NOP
T5
NOP
T5
Don’t Care
T5n
READ