FST6335SM GeneSiC Semiconductor, FST6335SM Datasheet
FST6335SM
Manufacturer Part Number
FST6335SM
Description
Schottky Diodes & Rectifiers Schottky Rectifier - 35 V - 60 A - D61-3SM
Manufacturer
GeneSiC Semiconductor
Datasheet
1.FST6335SM.pdf
(2 pages)
Specifications of FST6335SM
Product
Schottky Diodes
Peak Reverse Voltage
35 V
Forward Continuous Current
60 A
Max Surge Current
600 A
Forward Voltage Drop
0.75 V
Maximum Reverse Leakage Current
1 uA
Operating Temperature Range
- 40 C to + 125 C
Mounting Style
Through Hole
Package / Case
D61-3SM
www.genesicsemi.com
• High Surge Capability
• Types up to 100 V V
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward
Surge non-repetitive
forward current, Half Sine
Wave
Operating temperature
Storage temperature
Parameter
Diode forward voltage
Reverse current
Thermal resistance,
junction - case
Features
Maximum ratings, at T
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Thermal characteristics
Silicon Power
Schottky Diode
p
Parameter
p
RRM
j
Symbol
= 25 °C, unless otherwise specified
Symbol
V
V
V
R
I
V
T
F,SM
V
RRM
RMS
I
T
I
thJC
DC
stg
F
R
F
j
T
V
V
C
I
R
F
R
= 25 °C, t
= 10 V, T
= 60 A, T
= 10 V, T
Conditions
T
Conditions
C
≤ 105 °C
p
j
j
j
= 25 °C
= 125 °C
= 8.3 ms
= 25 °C
FST6310SM FST6315SM FST6320SM FST6330SM
FST6310SM FST6315SM FST6320SM FST6330SM
-40 to 125
-40 to 125
0.55
600
500
1.2
10
10
10
60
7
3
1
-40 to 125
-40 to 125
FST6310SM thru FST6335SM
0.55
600
500
1.2
15
15
10
15
60
3
-40 to 125
-40 to 125
0.55
600
500
1.2
20
20
14
20
60
3
D61-3SM Package
V
I
F
-40 to 125
-40 to 125
RRM
= 60 A
0.55
600
500
1.2
30
30
21
30
60
3
= 10 V - 100 V
FST6335SM
FST6335SM
-40 to 125
-40 to 125
0.55
600
500
1.2
35
35
25
35
60
3
°C/W
Unit
Unit
mA
°C
°C
V
V
V
V
A
A
V
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FST6335SM Summary of contents
Page 1
... Conditions FST6310SM FST6315SM FST6320SM FST6330SM °C 0. ° 125 °C 500 R j 1.2 1 FST6310SM thru FST6335SM 100 V RRM D61-3SM Package 600 ...
Page 2
... FST6310SM thru FST6335SM 2 ...