STW36N55M5 STMicroelectronics, STW36N55M5 Datasheet - Page 3

• Manufacturer Part Number: STW36N55M5
• Description: MOSFET N-Ch 550V 0.06 Ohm 33A MDmesh V FET
• Manufacturer: STMicroelectronics

Specifications of STW36N55M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 550 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 20.8 A
• Resistance Drain-source Rds (on): 0.08 Ohms
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-247
• Gate Charge Qg: 72 nC
• Power Dissipation: 190 W

STP36N55M5, STW36N55M5
1
Electrical ratings
Table 2.
1. I
Table 3.
Table 4.
Symbol
R
Symbol
R
Symbol
dv/dt
I
thj-case
thj-amb
P
E
DM
I
V
T
AR
SD
I
I
TOT
AS
T
GS
stg
D
D
j
(1)
(1)
≤ 33 A, di/dt ≤ 400 A/µs; V
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Avalanche current, repetetive or not repetetive
(pulse width limited by T
Single pulse avalanche energy (starting
T
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Peak diode recovery voltage slope
Storage temperature
Max. operating junction temperature
J
=25°C, I
Absolute maximum ratings
Thermal data
Avalanche characteristics
D
= I
AR
; V
Parameter
Parameter
Parameter
DD
DS(Peak)
C
=50 V)
Doc ID 022902 Rev 2
= 25 °C
jmax
< V
)
(BR)DSS
C
C
= 25 °C
= 100 °C
, V
DD
= 340 V.
TO-220
62.5
- 55 to 150
Value
Value
Value
0.66
± 25
20.8
132
190
150
510
33
15
7
Electrical ratings
TO-247
50
°C/W
°C/W
V/ns
Unit
Unit
Unit
mJ
°C
°C
W
V
A
A
A
A
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