IPP180N10N3 G Infineon Technologies, IPP180N10N3 G Datasheet

Manufacturer Part Number

IPP180N10N3 G

Description

MOSFET N-KANAL POWER MOS

Manufacturer

Infineon Technologies

Datasheet

1.IPP180N10N3_G.pdf (10 pages)

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

43 A

Resistance Drain-source Rds (on)

0.018 Ohms

Configuration

Single

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Package / Case

TO-220

Fall Time

5 ns

Minimum Operating Temperature

- 55 C

Power Dissipation

71 W

Rise Time

12 ns

Factory Pack Quantity

500

Typical Turn-off Delay Time

19 ns

Part # Aliases

IPP180N10N3GXK IPP180N10N3GXKSA1 SP000683090