NTP5864NG ON Semiconductor, NTP5864NG Datasheet - Page 2

• Manufacturer Part Number: NTP5864NG
• Description: MOSFET NFETSO8FL60V17A39M OHM
• Manufacturer: ON Semiconductor

Specifications of NTP5864NG

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 63 A
• Resistance Drain-source Rds (on): 12.4 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB-3
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 107 W

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS, V
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Parameter
GS
V
= 10 V (Note 3)
V
(T
V
(BR)DSS
Symbol
V
GS(TH)
Q
R
Q
t
(BR)DSS
J
C
C
t
d(OFF)
GS(TH)
I
I
C
G(TOT)
Q
Q
Q
DS(on)
d(ON)
V
g
DSS
GSS
G(TH)
t
= 25°C unless otherwise stated)
R
OSS
RSS
RR
t
t
FS
ISS
t
t
GS
GD
SD
RR
a
b
r
f
g
/T
/T
J
J
V
GS
http://onsemi.com
V
V
V
V
V
V
V
V
I
V
DS
GS
GS
S
GS
GS
V
V
I
= 0 V, dI
GS
DS
GS
D
GS
= 40 A
GS
DS
= 0 V,
= 60 V
= 20 A, R
= 0 V,
Test Condition
= 10 V, V
= 10 V, V
= 0 V, f = 1.0 MHz,
= 0 V, V
= V
= 0 V, I
= 15 V, I
= 10 V, I
V
I
I
DS
D
S
DS
2
SD
= 20 A
= 20 A
, I
= 25 V
/dt = 100 A/ms,
D
GS
D
G
DD
DS
= 250 mA
D
D
= 250 mA
= 2.5 W
= ±20 V
= 20 A
= 20 A
T
= 48 V,
= 48 V,
T
T
J
J
J
= 125°C
= 25°C
= 25°C
Min
2.0
60
1680
10.2
0.94
0.84
Typ
−10
189
124
2.0
7.3
0.5
6.4
4.6
7.9
58
10
31
10
10
18
24
16
20
±100
Max
12.4
1.0
4.0
1.2
mV/°C
mV/°C
Unit
mW
mA
nA
pF
nC
nC
ns
ns
W
V
V
S
V