NTP5864NG ON Semiconductor, NTP5864NG Datasheet - Page 3

• Manufacturer Part Number: NTP5864NG
• Description: MOSFET NFETSO8FL60V17A39M OHM
• Manufacturer: ON Semiconductor

Specifications of NTP5864NG

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 63 A
• Resistance Drain-source Rds (on): 12.4 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB-3
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 107 W

0.030
0.025
0.020
0.015
0.010
0.005
0.000
125
100
75
50
25
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
0
−50
4
I
V
D
GS
Figure 3. On−Resistance vs. Gate Voltage
= 20 A
−25
V
Figure 5. On−Resistance Variation with
Figure 1. On−Region Characteristics
V
GS
= 10 V
DS
V
5
GS
= 10 V
1
T
, DRAIN−TO−SOURCE VOLTAGE (V)
J
0
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
25
6
Temperature
2
50
7
7.5 V
6.5 V
7 V
75
3
100
8
TYPICAL CHARACTERISTICS
125
T
4
J
T
I
D
J
= 25°C
9
http://onsemi.com
= 20 A
= 25°C
5.0 V
5.5 V
4.5 V
150
175
5
10
3
100000
0.0105
0.0100
0.0095
10000
0.0115
0.0110
1000
125
100
100
75
50
25
0
10
2
10
V
Figure 6. Drain−to−Source Leakage Current
V
V
DS
Figure 4. On−Resistance vs. Drain Current
T
GS
GS
J
15
≥ 10 V
= 25°C
V
= 0 V
= 10 V
V
DS
Figure 2. Transfer Characteristics
GS
T
3
20
20
, DRAIN−TO−SOURCE VOLTAGE (V)
J
, GATE−TO−SOURCE VOLTAGE (V)
= 125°C
T
25
I
D
J
, DRAIN CURRENT (A)
= 25°C
vs. Voltage
4
30
30
T
T
J
J
= 150°C
= 125°C
35
T
J
= −55°C
40
5
40
45
50
50
6
55
60
7
60