NTP5864NG ON Semiconductor, NTP5864NG Datasheet - Page 4

• Manufacturer Part Number: NTP5864NG
• Description: MOSFET NFETSO8FL60V17A39M OHM
• Manufacturer: ON Semiconductor

Specifications of NTP5864NG

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 63 A
• Resistance Drain-source Rds (on): 12.4 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB-3
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 107 W

1000
1000
2500
2000
1500
1000
100
100
500
0.1
10
10
1
1
0
0.1
0
1
C
V
I
V
D
Figure 9. Resistive Switching Time Variation
Figure 11. Maximum Rated Forward Biased
rss
DD
GS
= 20 A
t
= 48 V
= 10 V
t
d(on)
d(off)
V
V
10
t
DS
t
DS
V
SINGLE PULSE
T
r
f
Figure 7. Capacitance Variation
C
C
GS
, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
oss
= 25°C
= 10 V
R
G
R
THERMAL LIMIT
PACKAGE LIMIT
Safe Operating Area
vs. Gate Resistance
, GATE RESISTANCE (W)
10 ms
DS(on)
dc
20
1
1 ms
LIMIT
C
100 ms
iss
30
10
10 ms
40
10
TYPICAL CHARACTERISTICS
V
T
50
J
GS
= 25°C
http://onsemi.com
= 0 V
60
100
100
4
100
10
90
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
8
6
4
2
0
0
0
0.40
25
0
Figure 12. Maximum Avalanche Energy versus
Figure 10. Diode Forward Voltage vs. Current
V
T
Figure 8. Gate−to−Source vs. Total Charge
GS
J
= 25°C
Q
0.50
= 0 V
T
gs
V
J
50
5
SD
, STARTING JUNCTION TEMPERATURE
Starting Junction Temperature
, SOURCE−TO−DRAIN VOLTAGE (V)
Q
0.60
g
, TOTAL GATE CHARGE (nC)
10
75
0.70
Q
gd
Q
0.80
100
15
T
0.90
20
125
1.00
I
T
D
J
I
25
D
150
= 20 A
= 25°C
1.10
= 40 A
1.20
175
30