IRFR9024NTR International Rectifier, IRFR9024NTR Datasheet - Page 4

• Manufacturer Part Number: IRFR9024NTR
• Description: MOSFET MOSFET, P-CHANNEL, -55V, 11A, 175 mOhm, 12.7 nC Qg, D-Pak
• Manufacturer: International Rectifier

Specifications of IRFR9024NTR

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Resistance Drain-source Rds (on): 175 mOhms
• Configuration: Single
• Package / Case: DPAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 38 W
• Typical Turn-off Delay Time: 23 ns

IRFR/U9024N
100
0.1
10
7 0 0
6 0 0
5 0 0
4 0 0
3 0 0
2 0 0
1 0 0
1
0.2
0
Fig 7. Typical Source-Drain Diode
Fig 5. Typical Capacitance Vs.
1
Drain-to-Source Voltage
-V
V
SD
D S
T = 150 C
0.6
J
Forward Voltage
,Source-to-Drain Voltage (V)
C
C
C
V
C
C
C
, Drain-to-Source V oltage (V)
rs s
o s s
is s
G S
is s
rs s
os s
= 0V ,
= C
= C
= C
°
gs
g d
ds
0.9
+ C
+ C
1 0
g d
gd
f = 1MH z
T = 25 C
, C
J
ds
1.3
°
V
SH OR TED
GS
= 0 V
1.6
1 0 0
A
1000
100
0.1
10
1
2 0
1 6
1 2
8
4
0
Fig 8. Maximum Safe Operating Area
1
0
T
T
Single Pulse
I
Fig 6. Typical Gate Charge Vs.
C
J
D
= 25 C
= 150 C
= -7 .2A
-V
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
DS
°
°
Q , Total G ate C harge (nC)
5
, Drain-to-Source Voltage (V)
G
V
V
DS
DS
1 0
BY R
= -44 V
= -28 V
10
DS(on)
FOR TE ST C IR C U IT
1 5
SE E FIG U R E 1 3
2 0
10us
100us
1ms
10ms
100
2 5
A