IRFR9024NTR International Rectifier, IRFR9024NTR Datasheet - Page 7

• Manufacturer Part Number: IRFR9024NTR
• Description: MOSFET MOSFET, P-CHANNEL, -55V, 11A, 175 mOhm, 12.7 nC Qg, D-Pak
• Manufacturer: International Rectifier

Specifications of IRFR9024NTR

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Resistance Drain-source Rds (on): 175 mOhms
• Configuration: Single
• Package / Case: DPAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 38 W
• Typical Turn-off Delay Time: 23 ns

V
GS
Re-Applied
Voltage
Reverse
Recovery
Current
*
Reverse Polarity of D.U.T for P-Channel
+
-
R
D.U.T
G
***
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
*
GS
P.W.
SD
DS
= 5.0V for Logic Level and 3V Drive Devices
Peak Diode Recovery dv/dt Test Circuit
Fig 14. For P-Channel HEXFETS
Waveform
Waveform
Ripple
Body Diode
Period
Body Diode Forward
+
-
dv/dt controlled by R
I
D.U.T. - Device Under Test
Diode Recovery
5%
SD
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
di/dt
Current Transformer
Low Stray Inductance
Ground Plane
Low Leakage Inductance
D =
-
G
Period
P.W.
+
IRFR/U9024N
[
[
[
V
V
I
SD
GS
DD
]
]
=10V
+
-
V
] ***
DD