IRFR9024NTR International Rectifier, IRFR9024NTR Datasheet - Page 7

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IRFR9024NTR

Manufacturer Part Number
IRFR9024NTR
Description
MOSFET MOSFET, P-CHANNEL, -55V, 11A, 175 mOhm, 12.7 nC Qg, D-Pak
Manufacturer
International Rectifier
Datasheet

Specifications of IRFR9024NTR

Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Resistance Drain-source Rds (on)
175 mOhms
Configuration
Single
Package / Case
DPAK
Minimum Operating Temperature
- 55 C
Power Dissipation
38 W
Typical Turn-off Delay Time
23 ns

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V
GS
Re-Applied
Voltage
Reverse
Recovery
Current
*
Reverse Polarity of D.U.T for P-Channel
+
-
R
D.U.T
G
***
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
*
GS
P.W.
SD
DS
= 5.0V for Logic Level and 3V Drive Devices
Peak Diode Recovery dv/dt Test Circuit
Fig 14. For P-Channel HEXFETS
Waveform
Waveform
Ripple
Body Diode
Period
Body Diode Forward
+
-
dv/dt controlled by R
I
D.U.T. - Device Under Test
Diode Recovery
5%
SD
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
di/dt
Current Transformer
Low Stray Inductance
Ground Plane
Low Leakage Inductance
D =
-
G
Period
P.W.
+
IRFR/U9024N
[
[
[
V
V
I
SD
GS
DD
]
]
=10V
+
-
V
] ***
DD

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