LND150N3-P002-G Supertex, LND150N3-P002-G Datasheet

LND150N3-P002-G

Manufacturer Part Number

LND150N3-P002-G

Description

MOSFET 500V 1KOhm

Manufacturer

Supertex

Datasheet

1.LND150K1-G.pdf (7 pages)

Specifications of LND150N3-P002-G

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

500 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

30 mA

Resistance Drain-source Rds (on)

1 kOhms

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-92

Fall Time

450 ns

Minimum Operating Temperature

- 55 C

Power Dissipation

0.74 W

Rise Time

450 ns

Factory Pack Quantity

2000

Typical Turn-off Delay Time

100 ns

Current page: 1 of 7
Download datasheet (625Kb)

Features

►

Applications

►

Ordering Information

-G indicates package is RoHS compliant (‘Green’)

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Product Marking

Parameter

Drain-to-source

Drain-to-gate

Gate-to-source

Operating and storage temperature

Soldering temperature*

LND150

Device

Distance of 1.6mm from case for 10 seconds.

Solid state relays

Normally-on switches

Converters

Power supply circuits

Constant current sources

Input protection circuits

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Excellent thermal stability

Integral source-drain diode

High input impedance and low C

ESD gate protection

NDEW

TO-236AB (SOT-23) (K1)

TO-236AB (SOT-23)

W = Code for Week Sealed

LND150K1-G

= “Green” Packaging

●

Packages may or may not include the following marks: Si or

Package Options

1235 Bordeaux Drive, Sunnyvale, CA 94089

ISS

LND150N3-G

N-Channel Depletion-Mode

DMOS FET

TO-92

-55

C to +150

D 1 5 0

Y Y W W

Si L N

300

Value

±20V

YY = Year Sealed

WW = Week Sealed

TO-243AA (SOT-89)

TO-92 (N3)

DGX

DSX

LND150N8-G

= “Green” Packaging

Pin Conﬁgurations

General Description

The LND150 is a high voltage N-channel depletion mode

(normally-on) transistor utilizing Supertex’s lateral DMOS

technology. The gate is ESD protected.

The LND150 is ideal for high voltage applications in the

areas of normally-on switches, precision constant current

sources, voltage ramp generation and ampliﬁcation.

TO-236AB (SOT-23) (K1)

SOURCE

●

Tel: 408-222-8888

GATE

DRAIN

DSX

500

(V)

/BV

LN1EW

SOURCE

TO-92 (N3)

DGX

TO-243AA (SOT-89) (N8)

●

www.supertex.com

TO-243AA (SOT-89) (N8)

DRAIN

W = Code for Week Sealed

GATE

(max)

(KΩ)

SOURCE

1.0

DS(ON)

= “Green” Packaging

GATE

LND150

SOURCE

(min)

(mA)

1.0

DRAIN

DSS

Related parts for LND150N3-P002-G

LND150N3-P002-G Summary of contents

Page 1

... Supertex’s lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current ISS sources, voltage ramp generation and ampliﬁcation. Package Options TO-92 TO-243AA (SOT-89) LND150N3-G LND150N8-G Pin Conﬁgurations Value BV DSX BV DGX ±20V ...

Page 2

... I = 1.0mA 25Ω GEN - - 0 -10V -10V PULSE GENERATOR R GEN INPUT ● Tel: 408-222-8888 ● www.supertex.com LND150 I I † DR DRM (mA) (mA 1.0mA = 100nA = 100nA = 450V DS = 125 25V = 1.0mA = 1.0mA DD L OUTPUT ...

Page 3

... Saturation Characteristics (V) DS Power Dissipation vs. Ambient Temperature 2 TO-243AA 1 TO-92 TO-236AB 100 125 T (°C) A Thermal Response Characteristics 1.0 TO-243AA 0 25° 1.2W D 0.6 0.4 TO- 1.0W 0 25° 0.001 0.01 0.1 1.0 t (seconds) P ● Tel: 408-222-8888 ● www.supertex.com LND150 V = 1.0V GS 0.5V 0V -0.5V -1.0V 5 150 10 ...

Page 4

... R 0.8 SOURCE 0.6 0.4 0.2 0.0 10 100 1K 10K R (Ω) SOURCE V and R Variation with Temperature GS(OFF) DS 1.8 1 1.0mA DS(ON) D 1.4 1 100nA GS(OFF) 1.0 0.8 - 100 Gate Drive Dynamic Characteristics 10 8.7pF V = 20V 40V 60V 0.1 0.2 Q (nanocoulombs) C ● Tel: 408-222-8888 ● www.supertex.com LND150 100K 2.0 1.6 1.2 0.8 0.4 150 0.3 ...

Page 5

... Top View Side View Symbol A A1 MIN 0.89 0.01 Dimension NOM - (mm) MAX 1.12 0.10 JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO236ABK1, Version C041309 Seating Plane 0.88 0.30 2.80 2.10 - 0.95 - 2.90 - 1.02 0.50 3 ...

Page 6

... Symbol A MIN .170 Dimensions NOM - (inches) MAX .210 JEDEC Registration TO-92. * This dimension is not speciﬁed in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009 Side View ...

Page 7

... JEDEC Registration TO-243, Variation AA, Issue C, July 1986. † This dimension differs from the JEDEC drawing Drawings not to scale. Supertex Doc. #: DSPD-3TO243AAN8, Version E051509. (The package drawing(s) in this data sheet may not reﬂect the most current speciﬁcations. For the latest package outline information go to http://www.supertex.com/packaging.html.) does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives Supertex inc ...

Related keywords

LND150N3-P002-G datasheet
LND150N3-P002-G data sheet
LND150N3-P002-G pdf datasheet
LND150N3-P002-G component
LND150N3-P002-G part
LND150N3-P002-G distributor
LND150N3-P002-G RoHS
LND150N3-P002-G datasheet download