LND150N3-P002-G Supertex, LND150N3-P002-G Datasheet - Page 4

• Manufacturer Part Number: LND150N3-P002-G
• Description: MOSFET 500V 1KOhm
• Manufacturer: Supertex

Specifications of LND150N3-P002-G

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 mA
• Resistance Drain-source Rds (on): 1 kOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Fall Time: 450 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.74 W
• Rise Time: 450 ns
• Factory Pack Quantity: 2000
• Typical Turn-off Delay Time: 100 ns

Typical Performance Curves
1.1
1.0
0.9
10
10
5
0
5
0
-50
0
Capacitance vs. Drain-to-Source Voltage
V
V
GS
DS
V
-1
= -10V
BV
GS
= 400V
= -5.0V
DSS
Transfer Characteristics
10
0
Variation with Temperature
0
V
V
T
DS
GS
j
(
50
20
1
O
(V)
(V)
C)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
2
100
30
(cont.)
C
C
C
ISS
OSS
RSS
3
150
40
4
1.8
1.6
1.4
1.2
1.0
0.8
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
-5
5
0
-50
10
0
V
●
GS(OFF)
125°C
Gate Drive Dynamic Characteristics
Tel: [phone]
and R
100
V
0
DS
25°C
Q
= 20V
8.7pF
0.1
DS
C
(nanocoulombs)
I
Variation with Temperature
R
D
vs R
SOURCE
T
R
j
1K
50
(
DS(ON)
O
SOURCE
C)
●
(Ω)
40V
V
@ I
GS(OFF)
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0.2
D
= 1.0mA
R
@ 100nA
10K
100
SOURCE
I
LND1
↓
D
60V
100K
150
0.3
2.0
1.6
1.2
0.8
0.4
LND150