LND150N3-P002-G Supertex, LND150N3-P002-G Datasheet - Page 3

• Manufacturer Part Number: LND150N3-P002-G
• Description: MOSFET 500V 1KOhm
• Manufacturer: Supertex

Specifications of LND150N3-P002-G

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 mA
• Resistance Drain-source Rds (on): 1 kOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Fall Time: 450 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.74 W
• Rise Time: 450 ns
• Factory Pack Quantity: 2000
• Typical Turn-off Delay Time: 100 ns

Typical Performance Curves
100
0.1
10
10
1
6
5
4
3
2
1
0
8
6
4
2
0
0
0
1
V
Maximum Rated Safe Operating Area
T
300µs pulse
2% duty cycle
Transconductance vs. Drain Current
DS
TO-236 (DC)
A
= 25°C
= 400V
TO-243AA (DC)
2
TO-92 (DC)
Output Characteristics
10
I
D
4
(milliamps)
V
V
250
DS
DS
(V)
(V)
●
6
1235 Bordeaux Drive, Sunnyvale, CA 94089
100
Pulsed
T
A
8
125°C
= -55°C
25°C
500
1000
10
-1.0V
-0.5V
0.5V
0V
V
GS
= 1.0V
3
1.0
0.8
0.6
0.4
0.2
2
1
6
5
4
3
2
1
0
0
0
0.001
Power Dissipation vs. Ambient Temperature
0
0
●
TO-243AA
TO-236AB
TO-92
Tel: [phone]
Thermal Response Characteristics
25
1
Saturation Characteristics
0.01
50
t
P
2
(seconds)
T
V
TO-243AA
T
P
A
DS
75
A
D
(°C)
0.1
= 25°C
= 1.2W
●
(V)
www.supertex.com
3
100
1.0
TO-92
P
T
4
125
C
D
= 1.0W
= 25°C
150
5
10
LND150
-0.5V
0V
-1.0V
V
0.5V
GS
= 1.0V