LND150N3-P002-G Supertex, LND150N3-P002-G Datasheet - Page 2

• Manufacturer Part Number: LND150N3-P002-G
• Description: MOSFET 500V 1KOhm
• Manufacturer: Supertex

Specifications of LND150N3-P002-G

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 mA
• Resistance Drain-source Rds (on): 1 kOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Fall Time: 450 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.74 W
• Rise Time: 450 ns
• Factory Pack Quantity: 2000
• Typical Turn-off Delay Time: 100 ns

Thermal Characteristics
Notes:
Electrical Characteristics
Switching Waveforms and Test Circuit
Notes:
ΔV
ΔR
† I
‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm
V
R
BV
I
1.
2.
Sym
t
C
C
t
GS(OFF)
D(OFF)
C
d(OFF)
I
I
G
V
TO-236AB (SOT-23)
DS(ON)
TO-243AA (SOT-89)
d(ON)
GS(OFF)
GSS
DSS
DS(ON)
t
OSS
RSS
t
D
t
ISS
SD
rr
DSX
FS
r
f
(continuous) is limited by max rated T
All D.C. parameters 100% tested at 25
All A.C. parameters sample tested.
OUTPUT
INPUT
Package
TO-92
Drain-to-source breakdown voltage
Gate-to-source off voltage
Change in V
Gate body leakage current
Drain-to-source leakage current
Saturated drain-to-source current
Static drain-to-source on-state resistance
Change in R
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
Parameter
-10V
V
0V
0V
DD
10%
GS(OFF)
DS(ON)
t
d(ON)
10%
t
(ON)
with temperature
with temperature
90%
(continuous)
t
r
●
(mA)
13
30
30
I
j
1235 Bordeaux Drive, Sunnyvale, CA 94089
.
D
O
(T
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
A
= 25
†
90%
t
d(OFF)
t
O
(OFF)
C unless otherwise specified)
(pulsed)
(mA)
30
30
30
t
90%
I
f
D
10%
Power Dissipation
2
Min
-1.0
500
1.0
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
@T
0.36
0.74
A
1.6
(W)
= 25
0.09
0.45
Typ
850
200
2.0
7.5
2.0
0.5
0.1
1.3
-
-
-
-
-
-
-
-
-
‡
GENERATOR
O
C
●
PULSE
1000
Tel: [phone]
Max
INPUT
-3.0
100
100
100
5.0
3.0
1.2
3.5
1.0
0.9
10
-
-
-
-
-
-
-
R
GEN
mV/
Units
(
%/
O
m
200
125
mA
C/W)
nA
nA
µA
pF
θ
15
µs
ns
V
V
Ω
V
Ω
jc
O
O
C
C V
●
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
I
R
V
V
Conditions
D
GS
GS
GS
GS
GS
DS
GS
GS
GS
GS
DS
GS
DS
DD
GS
GS
GEN
www.supertex.com
(
= 1.0mA,
O
350
170
C/W)
θ
78
= -10V, I
= 25V, I
= 25V, I
= ± 20V, V
= -10V, V
= 0.8V Max Rating,
= -10V, T
= 0V, V
= 0V, I
= 0V, I
= 0V, I
= -10V,
= 25V,
= 25V,
= -10V, I
= -10V, I
ja
= 25Ω
D
D
D
DS
D
D
= 0.5mA
= 0.5mA
= 1.0mA
V
D
SD
SD
R
A
= 100nA
= 100nA
DD
(mA)
DS
= 25V
L
I
13
30
30
= 1.0mA
= 125
DS
DR
= 1.0mA
= 1.0mA
= 450V
D.U.T.
= 0V
OUTPUT
LND150
O
C
I
(mA)
DRM
30
30
30
†