IS63LV1024-10KI ISSI, Integrated Silicon Solution Inc, IS63LV1024-10KI Datasheet - Page 3

• Manufacturer Part Number: IS63LV1024-10KI
• Description: IC SRAM 1MBIT 10NS 32SOJ
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS63LV1024-10KI

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (128K x 8)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3.15 V ~ 3.45 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-SOJ
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS63LV1024
IS63LV1024L
TRUTH TABLE
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. O
07/02/2010
OPERATING RANGE
DC ELECTRICAL CHARACTERISTICS
Note:
1. V
ABSOLUTE MAXIMUM RATINGS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
Mode
Not Selected
(Power-down)
Output Disabled
Read
Write
Range
Commercial
Industrial
Symbol Parameter
V
V
V
V
I
I
V
Symbol
V
T
P
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
LI
LO
IL
IH
STG
OH
OL
IH
IL
TERM
T
(min.) = –0.3V DC; V
(max.) = V
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
DD
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
+ 0.3V DC; V
Ambient Temperature
WE
WE
WE
WE
WE
IL
X
H
H
L
–40°C to +85°C
0°C to +70°C
(min.) = –2.0V AC (pulse width under Vss < 5ns). Not 100% tested.
IH
(1)
(max.) = V
CE
CE
CE
CE
CE
H
L
L
L
Test Conditions
V
V
GND ≤ V
GND ≤ V
DD
DD
DD
(1)
OE
OE
OE
OE
OE
= Min., I
= Min., I
+ 2.0V AC (pulse width over V
X
H
X
L
OUT
IN
(Over Operating Range)
≤ V
3.3V ± 0.15V
3.3V ± 0.3V
OH
OL
≤ V
DD
= 8.0 mA
= –4.0 mA
DD
V
1-800-379-4774
DD
, Outputs Disabled
I/O Operation
–0.5 to V
–65 to +150
High-Z
High-Z
D
D
OUT
Value
IN
1.0
DD
DD
+ 0.5
< 5ns). Not 100% tested.
Com.
Com.
Ind.
Ind.
V
DD
I
I
I
I
SB
CC
CC
CC
Current
1
Unit
1
1
1
Min.
–0.3
°C
, I
2.4
2.2
, I
, I
, I
W
V
–1
–5
–1
–5
—
CC
CC
CC
SB
2
2
2
2
V
DD
Max.
0.4
0.8
—
1
5
1
5
+ 0.3
Unit
µA
µA
V
V
V
V
3