MT46H8M32LFB5-5:H Micron Technology Inc, MT46H8M32LFB5-5:H Datasheet - Page 18

• Manufacturer Part Number: MT46H8M32LFB5-5:H
• Description: IC DDR SDRAM 256MBIT 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H8M32LFB5-5:H

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 4: AC/DC Electrical Characteristics and Operating Conditions (Continued)
Notes 1–5 apply to all parameters/conditions in this table; V
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Parameter/Condition
Output leakage current
(DQ are disabled; 0V ≤ V
Operating temperature
Commercial
Industrial
Notes:
OUT
≤ V
10. CK and CK# input slew rate must be ≥1 V/ns (2 V/ns if measured differentially).
11. V
12. The value of V
13. DQ and DM input slew rates must not deviate from DQS by more than 10%. 50ps must
1. All voltages referenced to V
2. All parameters assume proper device initialization.
3. Tests for AC timing, I
4. Outputs measured with equivalent load; transmission line delay is assumed to be very
5. Timing and I
6. Any positive glitch must be less than one-third of the clock cycle and not more than
7. V
8. To maintain a valid level, the transitioning edge of the input must:
9. V
DDQ
nominal supply voltage levels, but the related specifications and device operation are
guaranteed for the full voltage range specified.
small:
but input timing is still referenced to V
output timing reference voltage level is V
+200mV or 2.0V, whichever is less. Any negative glitch must be less than one-third of
the clock cycle and not exceed either –150mV or +1.6V, whichever is more positive.
8a. Sustain a constant slew rate from the current AC level through to the target AC lev-
el, V
8b. Reach at least the target AC level.
8c. After the AC target level is reached, continue to maintain at least the target DC lev-
el, V
be greater than one-third of the cycle rate. V
width ≤3ns and the pulse width cannot be greater than one-third of the cycle rate.
el on CK#.
variations in the DC level of the same.
be added to tDS and tDH for each 100 mV/ns reduction in slew rate. If slew rate exceeds
4 V/ns, functionality is uncertain.
)
DD
IH
ID
I/O
overshoot: V
is the magnitude of the difference between the input level on CK and the input lev-
and V
IL(AC)
IL(DC)
Full drive strength
Or V
or V
DDQ
50
DD
IH(DC)
IH(AC)
must track each other and V
IX
tests may use a V
IHmax
is expected to equal V
Symbol
.
.
I
T
T
DD
OZ
= V
A
A
20pF
, and electrical AC and DC characteristics may be conducted at
DDQ
DD
18
/V
SS
+ 1.0V for a pulse width ≤3ns and the pulse width cannot
DDQ
.
I/O
256Mb: x16, x32 Mobile LPDDR SDRAM
IL
Half drive strength
= 1.70–1.95V
-to-V
Min
–40
Micron Technology, Inc. reserves the right to change products or specifications without notice.
–5
0
DDQ/2
IH
DDQ/2
50
swing of up to 1.5V in the test environment,
DDQ/2
DDQ
of the transmitting device and must track
(or to the crossing point for CK/CK#). The
IL
.
must be less than or equal to V
undershoot: V
10pF
Max
Electrical Specifications
+70
+85
+5
©2008 Micron Technology, Inc. All rights reserved.
ILmin
= –1.0V for a pulse
Unit
μA
˚C
˚C
DD
Notes
.