MT46H8M32LFB5-5:H TR Micron Technology Inc, MT46H8M32LFB5-5:H TR Datasheet - Page 82

• Manufacturer Part Number: MT46H8M32LFB5-5:H TR
• Description: IC DDR SDRAM 256MBIT 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H8M32LFB5-5:H TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Concurrent Auto Precharge
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
This device supports concurrent auto precharge such that when a READ with auto pre-
charge is enabled or a WRITE with auto precharge is enabled, any command to another
bank is supported, as long as that command does not interrupt the read or write data
transfer already in process. This feature enables the precharge to complete in the bank
in which the READ or WRITE with auto precharge was executed, without requiring an
explicit PRECHARGE command, thus freeing the command bus for operations in other
banks. During the access period of a READ or WRITE with auto precharge, only ACTIVE
and PRECHARGE commands can be issued to other banks. During the precharge peri-
od, ACTIVE, PRECHARGE, READ, and WRITE commands can be issued to other banks.
In either situation, all other related limitations apply (for example, contention between
READ data and WRITE data must be avoided).
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256Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©2008 Micron Technology, Inc. All rights reserved.
Auto Precharge