IS41LV16100B
1M x 16 (16-MBIT) DYNAMIC RAM
WITH EDO PAGE MODE
FEATURES
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval:
— Auto refresh Mode: 1,024 cycles /16 ms
— RAS-Only, CAS-before-RAS (CBR), and Hidden
— Self refresh Mode: 1,024 cycles /128 ms
• JEDEC standard pinout
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Industrial Temperature Range: -40
• Lead-free available
PIN CONFIGURATIONS
50(44)-Pin TSOP (Type II)
42-Pin SOJ
VDD
VDD
1
44
GND
I/O0
2
43
I/O15
I/O0
I/O1
3
42
I/O14
I/O1
41
I/O2
4
I/O13
I/O2
I/O3
5
40
I/O12
I/O3
VDD
6
39
GND
VDD
I/O4
7
38
I/O11
I/O4
I/O5
8
37
I/O10
I/O5
I/O6
9
36
I/O9
I/O6
I/O7
10
35
I/O8
I/O7
NC
11
34
NC
NC
NC
12
33
NC
NC
LCAS
NC
13
32
WE
WE
UCAS
14
31
RAS
RAS
OE
15
30
NC
NC
16
29
A9
NC
NC
17
28
A8
A0
A0
18
27
A7
A1
A1
19
26
A6
A2
A2
20
25
A5
A3
A3
21
24
A4
VDD
22
23
GND
VDD
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. C
12/11/06
DESCRIPTION
ISSI
The
IS41LV16100B is 1,048,576 x 16-bit high-perfor-
mance CMOS Dynamic Random Access Memories. These
devices offer an accelerated cycle access called EDO
Page Mode. EDO Page Mode allows 1,024 random ac-
cesses within a single row with access cycle time as short
as 20 ns per 16-bit word.
These features make the IS41LV16100B ideally suited for
high-bandwidth graphics, digital signal processing, high-
performance computing systems, and peripheral
applications.
The IS41LV16100B is packaged in a 42-pin 400-mil SOJ
o
C to +85
o
C
and 400-mil 50- (44-) pin TSOP (Type II).
KEY TIMING PARAMETERS
Parameter
Max. RAS Access Time (t
Max. CAS Access Time (t
Max. Column Address Access Time (t
1
42
GND
Min. EDO Page Mode Cycle Time (t
2
41
I/O15
Min. Read/Write Cycle Time (t
3
40
I/O14
4
39
I/O13
5
38
I/O12
6
37
GND
PIN DESCRIPTIONS
7
36
I/O11
8
35
I/O10
A0-A9
9
34
I/O9
10
33
I/O8
I/O0-15
11
32
NC
WE
LCAS
12
31
UCAS
13
30
OE
OE
14
29
RAS
15
28
A9
16
27
A8
UCAS
17
26
A7
LCAS
18
25
A6
19
24
A5
V
DD
20
23
A4
21
22
GND
GND
NC
1-800-379-4774
DECEMBER 2006
-50
-60
)
50
60
RAC
)
14
15
CAC
)
25
30
AA
)
30
40
PC
)
85
110
RC
Address Inputs
Data Inputs/Outputs
Write Enable
Output Enable
Row Address Strobe
Upper Column Address Strobe
Lower Column Address Strobe
Power
Ground
No Connection
®
Unit
ns
ns
ns
ns
ns
1