IS41LV16100B-50T-TR ISSI, Integrated Silicon Solution Inc, IS41LV16100B-50T-TR Datasheet - Page 21

• Manufacturer Part Number: IS41LV16100B-50T-TR
• Description: IC DRAM 16MBIT 50NS 44TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS41LV16100B-50T-TR

• Format - Memory: RAM
• Memory Type: DRAM - EDO
• Memory Size: 16M (1M x 16)
• Speed: 50ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

PACKAGING INFORMATION
2
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
No. Leads (N)
Symbol
A1
A2
E1
E2
A
B
C
D
E
b
e
Min
Millimeters
25.91 26.16
11.05 11.30
10.03 10.29
3.25
0.64
2.08
0.38
0.66
0.18
9.40 BSC
1.27 BSC
Max
3.75
0.51
0.81
0.33
—
—
40
Min
1.020 1.030
0.435 0.445
0.395 0.405
0.128 0.148
0.025
0.082
0.015 0.020
0.026 0.032
0.007 0.013
Inches
0.370 BSC
0.050 BSC
Max
—
—
Integrated Silicon Solution, Inc. — www.issi.com —
27.18 27.43
10.03 10.29
11.05 11.30
Min
Millimeters
3.25
0.64
2.08
0.38
0.66
0.18
1.27 BSC
9.40 BSC
Max
—
—
3.75
0.51
0.81
0.33
42
Min
0.128 0.148
0.025
0.082
0.015 0.020
0.026 0.032
0.007 0.013
1.070 1.080
0.435 0.445
0.395 0.405
Inches
0.370 BSC
0.050 BSC
Max
—
—
28.45 28.70
11.05 11.30
10.03 10.29
Min
Millimeters
3.25
0.64
2.08
0.38
0.66
0.18
1.27 BSC
9.40 BSC
Max
3.75
0.51
0.81
0.33
—
—
44
Min
0.128 0.148
0.025
0.082
0.015 0.020
0.026 0.032
0.007 0.013
1.120 1.130
0.435 0.445
0.395 0.405
0.370 BSC
0.050 BSC
Inches
ISSI
Max
1-800-379-4774
—
—
10/29/03
Rev. F
®