MT46H8M32LFB5-5 IT:H TR Micron Technology Inc, MT46H8M32LFB5-5 IT:H TR Datasheet - Page 30

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MT46H8M32LFB5-5 IT:H TR

Manufacturer Part Number
MT46H8M32LFB5-5 IT:H TR
Description
IC DDR SDRAM 256MBIT 90VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT46H8M32LFB5-5 IT:H TR

Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
256M (8Mx32)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
90-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 11: Target Output Drive Characteristics (Three-Quarter Strength)
Notes 1–2 apply to all values; characteristics are specified under best and worst process variations/conditions
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Voltage (V)
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.85
0.90
0.95
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
Notes:
1. Based on nominal impedance of 37Ω (three-quarter drive strength) at V
2. The full variation in driver current from minimum to maximum, due to process, voltage,
11.76
13.72
15.68
16.66
16.66
16.66
16.66
16.66
16.66
16.66
16.66
16.66
16.66
16.66
16.66
16.66
and temperature, will lie within the outer bounding lines of the I-V curves.
Min
0.00
1.96
3.92
5.88
7.84
9.80
Pull-Down Current (mA)
12.97
18.76
22.96
25.94
28.00
29.75
31.20
32.55
33.24
33.95
34.58
35.04
35.95
36.86
37.77
38.68
39.59
40.50
41.41
42.32
43.23
Max
0.00
30
256Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Output Drive Characteristics
–11.76
–13.72
–15.68
–16.66
–16.66
–16.66
–16.66
–16.66
–16.66
–16.66
–16.66
–16.66
–16.66
–16.66
–16.66
–16.66
–1.96
–3.92
–5.88
–7.84
–9.80
Min
0.00
Pull-Up Current (mA)
©2008 Micron Technology, Inc. All rights reserved.
DDQ
–12.97
–18.76
–22.96
–25.94
–28.00
–29.75
–31.20
–32.55
–33.24
–33.95
–34.58
–35.04
–35.95
–36.86
–37.77
–38.68
–39.59
–40.50
–41.41
–42.32
–43.23
Max
0.00
/2.

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