MT46H8M32LFB5-5 IT:H TR Micron Technology Inc, MT46H8M32LFB5-5 IT:H TR Datasheet - Page 61

• Manufacturer Part Number: MT46H8M32LFB5-5 IT:H TR
• Description: IC DDR SDRAM 256MBIT 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H8M32LFB5-5 IT:H TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 24: Nonconsecutive READ Bursts
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Command
Command
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Notes:
READ
Bank,
READ
Bank,
Col n
Col n
T0
T0
1. D
2. BL = 4, 8, or 16 (if burst is 8 or 16, the second burst interrupts the first).
3. Shown with nominal
4. Example applies when READ commands are issued to different devices or nonconsecu-
tive READs.
OUT
CL = 2
NOP
NOP
T1
T1
n (or b) = data-out from column n (or column b).
CL = 3
T1n
T1n
D
OUT
NOP
NOP
T2
T2
1
t
AC,
D
OUT
T2n
T2n
61
t
DQSCK, and
D
256Mb: x16, x32 Mobile LPDDR SDRAM
D
OUT
READ
Bank,
READ
Bank,
Col b
Col b
OUT
T3
T3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
D
D
T3n
T3n
t
OUT
DQSQ.
OUT
CL = 2
D
T4
T4
NOP
NOP
OUT
Don’t Care
CL = 3
D
T4n
T4n
OUT
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T5
T5
NOP
NOP
D
OUT
READ Operation
Transitioning Data
T5n
T5n
D
OUT
T6
T6
NOP
NOP
D
D
OUT
OUT