MT46H16M16LFBF-5 IT:H TR Micron Technology Inc, MT46H16M16LFBF-5 IT:H TR Datasheet - Page 43

• Manufacturer Part Number: MT46H16M16LFBF-5 IT:H TR
• Description: IC DDR SDRAM 256MBIT 60VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H16M16LFBF-5 IT:H TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
4. AUTO REFRESH and LOAD MODE REGISTER commands can only be issued when all
5. All states and sequences not shown are illegal or reserved.
6. Requires appropriate DM masking.
7. A WRITE command can be applied after the completion of the READ burst; otherwise, a
banks are idle.
BURST TERMINATE must be used to end the READ burst prior to asserting a WRITE com-
mand.
From
Command
READ with
Auto Precharge
To Command
READ or READ with auto precharge
WRITE or WRITE with auto precharge
PRECHARGE
ACTIVE
43
256Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
(with Concurrent Auto
©2008 Micron Technology, Inc. All rights reserved.
Minimum Delay
[CL + (BL/2)]
Precharge)
(BL/2) ×
1
1
Truth Tables
t
t
CK
CK
t
CK
t
CK