MT46H16M16LFBF-5 IT:H TR Micron Technology Inc, MT46H16M16LFBF-5 IT:H TR Datasheet - Page 68

• Manufacturer Part Number: MT46H16M16LFBF-5 IT:H TR
• Description: IC DDR SDRAM 256MBIT 60VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H16M16LFBF-5 IT:H TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 31: Data Output Timing –
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
All DQ values, collectively
Command
DQS or LDQS/UDQS
CK#
CK
READ
T0
Notes:
3
2
1. Commands other than NOP can be valid during this cycle.
2. DQ transitioning after DQS transitions define
3. All DQ must transition by
4.
NOP
T1
t
AC is the DQ output window relative to CK and is the long-term component of DQ skew.
CL = 3
1
t
LZ
t
AC and
NOP
T2
t
t
RPRE
DQSCK
t
1
t
DQSCK
LZ
t
AC
T2n
4
T2
t
68
DQSQ after DQS transitions, regardless of
NOP
T3
256Mb: x16, x32 Mobile LPDDR SDRAM
1
T2n
T3n
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
DQSCK
t
AC
T3
NOP
4
T4
t
1
DQSQ window.
T3n
T4n
T4
NOP
T5
1
©2008 Micron Technology, Inc. All rights reserved.
T4n
T5n
READ Operation
t
AC.
T5
NOP
T6
1
Don’t Care
T5n
t
t
t
HZ
HZ
RPST