BCP51-16 /T3 NXP Semiconductors, BCP51-16 /T3 Datasheet - Page 19

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BCP51-16 /T3

Manufacturer Part Number
BCP51-16 /T3
Description
Transistors Bipolar - BJT TRANS MED PWR TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCP51-16 /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
45 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
145 MHz
Dc Collector/base Gain Hfe Min
63 at 5 mA at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-223
Continuous Collector Current
1 A
Maximum Power Dissipation
1000 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
BCP51-16,135
NXP Semiconductors
12. Revision history
Table 10.
BCP51_BCX51_BC51PA
Product data sheet
Document ID
BCP51_BCX51_BC51PA v.9
Modifications:
BC636_BCP51_BCX51 v.8
BC636_BCP51_BCX51 v.7
BC636_BCP51_BCX51 v.6
BC636_638_640 v.5
BCP51_52_53 v.5
BCX51_52_53 v.4
Revision history
Release date
20111013
20080222
20070629
20060329
20041011
20030206
20011010
Deleted type number BC636
Added Type number BC51PA
Section 1 “Product
Table 6
Figure 1
Figure 10
Section 8 “Test
Section 11
Section 13 “Legal
All information provided in this document is subject to legal disclaimers.
and 7: updated according to latest measurements
to 9, 15, 17,
to 14: added
“Soldering”: added
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Product data sheet
Product specification
Product specification
Product specification
Rev. 9 — 13 October 2011
information”: added
information”: updated
profile”: updated
18
and 21: updated
BCP51; BCX51; BC51PA
Change notice Supersedes
-
-
-
-
-
-
-
45 V, 1 A PNP medium power transistors
BC636_BCP51_BCX51 v.8
BC636_BCP51_BCX51 v.7
BC636_BCP51_BCX51 v.6
BC636_638_640 v.5
BC636_638_640 v.4
BCP51_52_53 v.4
BCX51_52_53 v.3
BCP51_52_53 v.5
BCX51_52_53 v.4
© NXP B.V. 2011. All rights reserved.
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