IS41LV16105B-50K ISSI, Integrated Silicon Solution Inc, IS41LV16105B-50K Datasheet - Page 4

• Manufacturer Part Number: IS41LV16105B-50K
• Description: IC DRAM 16MBIT 50NS 42SOJ
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS41LV16105B-50K

• Format - Memory: RAM
• Memory Type: DRAM - FP
• Memory Size: 16M (1M x 16)
• Speed: 50ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 42-SOJ
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS41LV16105B
Functional Description
The IS41LV16105B is a CMOS DRAM optimized for high-
speed bandwidth, low power applications. During READ or
WRITE cycles, each bit is uniquely addressed through the
16 address bits. These are entered ten bits (A0-A9) at a
time. The row address is latched by the Row Address
Strobe (RAS). The column address is latched by the
Column Address Strobe (CAS). RAS is used to latch the
first nine bits and CAS is used the latter nine bits.
The IS41LV16105B has two CAS controls, LCAS and
UCAS. The LCAS and UCAS inputs internally generates a
CAS signal functioning in an identical manner to the single
CAS input on the other 1M x 16 DRAMs. The key difference
is that each CAS controls its corresponding I/O tristate
logic (in conjunction with OE and WE and RAS). LCAS
controls I/O0 through I/O7 and UCAS controls I/O8 through
I/O15.
The IS41LV16105B CAS function is determined by the first
CAS (LCAS or UCAS) transitioning LOW and the last
transitioning back HIGH. The two CAS controls give the
IS41LV16105B both BYTE READ and BYTE WRITE cycle
capabilities.
Memory Cycle
A memory cycle is initiated by bring RAS LOW and it is
terminated by returning both RAS and CAS HIGH. To
ensures proper device operation and data integrity any
memory cycle, once initiated, must not be ended or
aborted before the minimum t
cycle must not be initiated until the minimum precharge
time t
Read Cycle
A read cycle is initiated by the falling edge of CAS or OE,
whichever occurs last, while holding WE HIGH. The
column address must be held for a minimum time speci-
fied by t
t
is dependent on the timing relationships between these
parameters.
4
CAC
and t
RP
, t
AR
OEA
CP
. Data Out becomes valid only when t
has elapsed.
are all satisfied. As a result, the access time
RAS
time has expired. A new
RAC
, t
AA
,
Write Cycle
A write cycle is initiated by the falling edge of CAS and WE,
whichever occurs last. The input data must be valid at or
before the falling edge of CAS or WE, whichever occurs
last.
Refresh Cycle
To retain data, 1,024 refresh cycles are required in each
16 ms period. There are two ways to refresh the memory.
1. By clocking each of the 1,024 row addresses (A0
2. Using a CAS-before-RAS refresh cycle. CAS-before-
CAS-before-RAS is a refresh-only mode and no data
access or device selection is allowed. Thus, the output
remains in the High-Z state during the cycle.
Power-On
After application of the V
200 µs is required followed by a minimum of eight
initialization cycles (any combination of cycles contain-
ing a RAS signal).
During power-on, it is recommended that RAS track with
V
DD
through A9) with RAS at least once every 16 ms. Any
read, write, read-modify-write or RAS-only cycle re-
freshes the addressed row.
RAS refresh is activated by the falling edge of RAS,
while holding CAS LOW. In CAS-before-RAS refresh
cycle, an internal 9-bit counter provides the row ad-
dresses and the external address inputs are ignored.
Integrated Silicon Solution, Inc. — 1-800-379-4774
or be held at a valid V
DD
IH
to avoid current surges.
supply, an initial pause of
ISSI
04/18/05
Rev. B
®