MT48LC8M16LFB4-8 IT:G Micron Technology Inc, MT48LC8M16LFB4-8 IT:G Datasheet - Page 73

• Manufacturer Part Number: MT48LC8M16LFB4-8 IT:G
• Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48LC8M16LFB4-8 IT:G

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 54-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 19/8/7ns
• Maximum Clock Rate: 125MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 100mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 52:
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
DQMU, DQML
COMMAND
A0–A9, A11
BA0, BA1
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
Single Write – Without Auto Precharge
ACTIVE
T0
ROW
ROW
BANK
t CKH
t CMH
t AH
t AH
t AH
Notes:
t CK
t RCD
t RAS
t RC
T1
1. For this example, BL = 1, and the WRITE burst is followed by a “manual” PRECHARGE.
2. 15ns is required between <D
3. x16: A9 and A11 = “Don’t Care.”
4. PRECHARGE command not allowed or
NOP
x32: A8, A9, and A11 = “Don’t Care.”
See Table 17 on page 53.
DISABLE AUTO PRECHARGE
t CMS
t CL
t DS
COLUMN m 3
T2
WRITE
BANK
D
IN
t CMH
t CH
t DH
m
t WR
2
NOP 4
T3
73
IN
NOP 4
m> and the PRECHARGE command regardless of frequency.
T4
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
RAS would be violated.
PRECHARGE
SINGLE BANK
ALL BANKS
T5
BANK
128Mb: x16, x32 Mobile SDRAM
t RP
T6
NOP
©2001 Micron Technology, Inc. All rights reserved.
ACTIVE
BANK
ROW
T7
Timing Diagrams
NOP
T8
DON’T CARE