MT48H32M16LFBF-6:B TR Micron Technology Inc, MT48H32M16LFBF-6:B TR Datasheet - Page 80

• Manufacturer Part Number: MT48H32M16LFBF-6:B TR
• Description: IC SDRAM 512MBIT 166MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H32M16LFBF-6:B TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power-Down
Figure 49: Power-Down Mode
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
Command
BA0, BA1
Address
Precharge all
active banks
DQM
CKE
CLK
A10
DQ
High-Z
t CMS
t CKS
PRECHARGE
t AS
Single bank
All banks
Bank(s)
T0
t CMH
t CKH
t AH
Note:
Two clock cycles
Power-down occurs if CKE is registered LOW coincident with a NOP or COMMAND IN-
HIBIT when no accesses are in progress. If power-down occurs when all banks are idle,
this mode is referred to as precharge power-down; if power-down occurs when there is
a row active in any bank, this mode is referred to as active power-down. Entering power-
down deactivates the input and output buffers, excluding CKE, for maximum power
savings while in standby. The device cannot remain in the power-down state longer
than the refresh period (64ms) because no REFRESH operations are performed in this
mode.
The power-down state is exited by registering a NOP or COMMAND INHIBIT with CKE
HIGH at the desired clock edge (meeting
All banks idle, enter
power-down mode
t CK
1. Violating refresh requirements during power-down may result in a loss of data.
T1
NOP
t CL
t CKS
T2
NOP
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
t CH
Input buffers gated off
while in power-down mode
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Exit power-down mode
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
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t
CKS).
t CKS
Tn + 1
NOP
All banks idle
© 2007 Micron Technology, Inc. All rights reserved.
Tn + 2
Power-Down
ACTIVE
Row
Bank
Row
Don’t Care