MT48LC64M8A2P-75:C TR Micron Technology Inc, MT48LC64M8A2P-75:C TR Datasheet - Page 54

• Manufacturer Part Number: MT48LC64M8A2P-75:C TR
• Description: IC SDRAM 512MBIT 133MHZ 54TSOP
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC64M8A2P-75:C TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-TSOP II
• Organization: 64Mx8
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 115mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1198-2

Figure 38:
PDF: 09005aef809bf8f3/Source: 09005aef80818a4a
512MbSDRAM.fm - Rev. L 10/07 EN
DQML, DQMU
COMMAND
BA0, BA1
A11, A12
A0–A9,
DQM/
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
READ – Without Auto Precharge
ACTIVE
T0
ROW
ROW
BANK
t CKH
t CMH
t AH
t AH
t AH
Notes:
t RCD
t RAS
t RC
t CK
T1
1. For this example, BL = 4, CL = 2, and the READ burst is followed by a “manual” PRECHARGE.
2. x16: A11 and A12 = “Don’t Care”; x8: A12 = “Don’t Care.”
NOP
DISABLE AUTO PRECHARGE
t CMS
t CL
COLUMN m 2
T2
BANK
READ
t CH
t CMH
CAS Latency
T3
NOP
t LZ
t AC
54
T4
NOP
D
OUT
t OH
t AC
m
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D
T5
OUT
NOP
m + 1
t OH
t AC
SINGLE BANK
PRECHARGE
ALL BANKS
D
BANK
T6
512Mb: x4, x8, x16 SDRAM
OUT
t OH
m + 2
t RP
t AC
©2000 Micron Technology, Inc. All rights reserved.
D
T7
NOP
OUT
t OH
m + 3
Timing Diagrams
t HZ
ROW
BANK
T8
ROW
ACTIVE
Don’t Care
Undefined