MT46H32M32LFCM-5 IT:A Micron Technology Inc, MT46H32M32LFCM-5 IT:A Datasheet - Page 25

• Manufacturer Part Number: MT46H32M32LFCM-5 IT:A
• Description: IC DDR SDRAM 1GBIT 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H32M32LFCM-5 IT:A

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 1G (32M x 32)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-VFBGA
• Organization: 32Mx32
• Density: 1Gb
• Address Bus: 13b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 150mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 10: Electrical Characteristics and Recommended AC Operating Conditions (Continued)
Notes 1–9 apply to all the parameters in this table; V
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. K 07/09 EN
Parameter
Data-out High-
Z window from
CK/CK#
Data-out Low-Z window from
CK/CK#
Address and control input hold
time (fast slew rate)
Address and control input hold
time (slow slew rate)
Address and control input
setup time (fast slew rate)
Address and control input
setup time (slow slew rate)
Address and control input pulse
width
LOAD MODE REGISTER
command cycle time
DQ–DQS hold, DQS to first DQ
to go nonvalid, per access
Data hold skew factor
ACTIVE-to-PRECHARGE
command
ACTIVE to ACTIVE/ACTIVE to AU-
TO REFRESH command period
Active to read or write delay
Refresh period
Average periodic refresh
interval
AUTO REFRESH command
period
PRECHARGE command period
DQS read
preamble
DQS read postamble
Active bank a to active bank b
command
Read of SRR to next valid
command
SRR to read
DQS write preamble
CL = 3
CL = 2
CL = 3
CL = 2
Symbol
t
t
t
t
t
WPRE
t
t
t
t
t
t
MRD
t
RPRE
RPRE
t
t
t
RPST
t
t
t
QHS
RCD
REFI
RRD
t
IPW
RAS
t
t
t
t
REF
RFC
t
SRC
SRR
QH
HZ
IH
IH
IS
IS
RC
RP
LZ
F
S
F
S
CL + 1
t
t
Min
0.25
QHS
110
HP -
1.0
0.9
1.1
0.9
1.1
2.3
0.9
0.5
0.4
40
55
15
15
10
2
2
–
–
–
–
–
Electrical Specifications – AC Operating Conditions
-5
70,000
DD
Max
5.0
6.5
0.5
7.8
1.1
1.1
0.6
64
/V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
DDQ
CL + 1
25
t
t
= 1.70–1.95V
Min
58.2
16.2
16.2
10.8
0.25
QHS
110
HP -
1.0
1.0
1.2
1.0
1.2
2.5
0.9
0.5
0.4
42
2
2
–
–
–
–
–
-54
70,000
Max
1Gb: x16, x32 Mobile LPDDR SDRAM
5.0
6.5
0.5
7.8
1.1
1.1
0.6
64
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Micron Technology, Inc. reserves the right to change products or specifications without notice.
CL + 1
t
t
Min
0.25
QHS
HP -
110
1.0
1.1
1.2
1.1
1.2
2.6
0.9
0.5
0.4
42
60
18
18
12
2
2
–
–
–
–
–
-6
70,000
Max
0.65
5.5
6.5
7.8
1.1
1.1
0.6
64
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
CL + 1
t
t
Min
t
67.5
22.5
22.5
0.25
QHS
110
HP -
1.0
1.3
1.5
1.3
1.5
0.9
0.5
0.4
IS +
t
45
15
IH
–
–
2
–
–
–
2
©2007 Micron Technology, Inc. All rights reserved.
-75
70,000
Max
0.75
6.0
6.5
7.8
1.1
1.1
0.6
64
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Unit
t
t
t
t
t
t
t
ms
ns
ns
ns
ns
ns
ns
ns
ns
CK
ns
ns
ns
ns
ns
μs
ns
ns
CK
CK
CK
ns
CK
CK
CK
Notes
19, 20
15, 21
15, 21
13, 17
19
16
22
23