MT46H64M16LFCK-5 L IT:A Micron Technology Inc, MT46H64M16LFCK-5 L IT:A Datasheet - Page 67

IC DDR SDRAM 1GBIT 60VFBGA

MT46H64M16LFCK-5 L IT:A

Manufacturer Part Number
MT46H64M16LFCK-5 L IT:A
Description
IC DDR SDRAM 1GBIT 60VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT46H64M16LFCK-5 L IT:A

Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
1G (64M x 16)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
60-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 31: Data Output Timing –
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. K 07/09 EN
All DQ values, collectively
Command
DQS or LDQS/UDQS
CK#
CK
READ
T0
Notes:
3
2
1. Commands other than NOP can be valid during this cycle.
2. DQ transitioning after DQS transitions define
3. All DQ must transition by
4.
NOP
T1
t
AC is the DQ output window relative to CK and is the long-term component of DQ skew.
CL = 3
1
t
LZ
t
AC and
NOP
T2
t
t
RPRE
DQSCK
t
1
t
DQSCK
LZ
t
AC
T2n
4
T2
t
67
DQSQ after DQS transitions, regardless of
NOP
T3
1
T2n
1Gb: x16, x32 Mobile LPDDR SDRAM
T3n
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
DQSCK
t
AC
T3
NOP
4
T4
t
1
DQSQ window.
T3n
T4n
T4
NOP
T5
1
©2007 Micron Technology, Inc. All rights reserved.
T4n
T5n
READ Operation
t
AC.
T5
NOP
T6
1
Don’t Care
T5n
t
t
t
HZ
HZ
RPST

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