MT46V64M16TG-6T:A TR Micron Technology Inc, MT46V64M16TG-6T:A TR Datasheet - Page 21

• Manufacturer Part Number: MT46V64M16TG-6T:A TR
• Description: IC DDR SDRAM 1GBIT 6NS 66TSOP
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V64M16TG-6T:A TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 1G (64M x 16)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 275mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 15:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
AC Characteristics
Parameter
Write recovery time
Internal WRITE-to-READ command delay
Exit SELF REFRESH-to-non-READ
command
Exit SELF REFRESH-to-READ command
Data valid output window
Electrical Characteristics and Recommended AC Operating Conditions (-5B) (continued)
Notes 1–6, 16–18, 34 apply to the entire table; Notes appear on page 26;
0°C ≤ T
A
≤ +70°C; V
DD
Q = +2.6V ±0.1V, V
1Gb
DD
= +2.6V ±0.1V
21
Symbol
t
t
t
XSNR
XSRD
t
WTR
n/a
WR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
Min
126
200
15
t
2
QH -
1Gb: x4, x8, x16 DDR SDRAM
-5B
t
DQSQ
Max
–
–
–
–
©2003 Micron Technology, Inc. All rights reserved.
Units
t
t
ns
CK
ns
CK
ns
Notes
26