M25PX32-VZM6F NUMONYX, M25PX32-VZM6F Datasheet - Page 47

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M25PX32-VZM6F

Manufacturer Part Number
M25PX32-VZM6F
Description
IC FLASH 32MBIT 75MHZ 24TBGA
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25PX32-VZM6F

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
32M (4M x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
24-TBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M25PX32-VZM6FTR

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6.17
Bulk Erase (BE)
The Bulk Erase (BE) instruction sets all bits to 1 (FFh). Before it can be accepted, a Write
Enable (WREN) instruction must previously have been executed. After the Write Enable
(WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Bulk Erase (BE) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code on Serial Data input (DQ0). Chip Select (S) must be driven Low for the
entire duration of the sequence.
The instruction sequence is shown in
Chip Select (S) must be driven High after the eighth bit of the instruction code has been
latched in, otherwise the Bulk Erase instruction is not executed. As soon as Chip Select (S)
is driven High, the self-timed Bulk Erase cycle (whose duration is t
Bulk Erase cycle is in progress, the Status Register may be read to check the value of the
Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Bulk
Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is
completed, the Write Enable Latch (WEL) bit is reset.
The Bulk Erase (BE) instruction is executed only if all Block Protect (BP2, BP1, BP0) bits
are 0. The Bulk Erase (BE) instruction is ignored if one, or more, sectors are protected.
Figure 26. Bulk Erase (BE) instruction sequence
S
C
DQ0
Figure
0
1
2
26.
Instruction
3
4
5
6
7
BE
AI13743
) is initiated. While the
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