CY62256NLL-55SNXIT Cypress Semiconductor Corp, CY62256NLL-55SNXIT Datasheet - Page 5

• Manufacturer Part Number: CY62256NLL-55SNXIT
• Description: IC SRAM 256KBIT 55NS 28SOIC
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY62256NLL-55SNXIT

• Memory Size: 256K (32K x 8)
• Package / Case: 28-SOIC (7.5mm Width)
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 55 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.5 V
• Maximum Operating Current: 50 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 5 V
• Rohs Compliant: YES
• Density: 256Kb
• Access Time (max): 55ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 5V
• Address Bus: 15b
• Package Type: SNC N
• Operating Temp Range: -40C to 85C
• Supply Current: 50mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 28
• Word Size: 8b
• Number Of Words: 32K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Thermal Resistance
Data Retention Characteristics
Document Number: 001-06511 Rev. *D
OUTPUT
V
I
t
t
Notes
Parameter
CCDR
CDR
R
Parameter
7. Tested initially and after any design or process changes that may affect these parameters.
8. No input may exceed V
9. Typical specifications are the mean values measured over a large sample size across normal production process variations and are taken at nominal conditions
DR
[7]
INCLUDING
(T
[7]


5 V
A
JA
JC
= 25 °C, V
JIG AND
SCOPE
V
100 pF
CE
CC
[7]
V
Data retention current
Chip deselect to data retention time
Operation recovery time
CC
CC
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
). Parameters are guaranteed by design and characterization, and not 100% tested.
R1 1800 
for data retention
(a)
CC
Description
+ 0.5 V.
R2
990
Description
OUTPUT
INCLUDING
5 V
LL - Commercial
LL - Industrial/Auto-A
LL - Auto-E
JIG AND
Figure 3. AC Test Loads and Waveforms
SCOPE
t
CDR
3.0 V
Figure 4. Data Retention Waveform
5 pF
Still air, soldered on a 4.25 × 1.125
inch, 4-layer printed circuit board
(b)
Test Conditions
R1 1800 
DATA RETENTION MODE
R2
990
V
V
CC
IN
> V
= 2.0V, CE > V
V
DR
CC
Conditions
> 2 V
 0.3V, or V
Equivalent to:
GND
3.0 V
< 5 ns
CC
75.61
43.12
[8]
DIP
IN
 0.3V,
OUTPUT
10%
< 0.3V
76.56
36.07
SOIC
THÉ VENIN EQUIVALENT
ALL INPUT PULSES
90%
3.0 V
Min
t
2.0
RC
0
–
–
–
t
R
TSOP
93.89
24.64
639
Typ
0.1
0.1
0.1
–
–
–
[9]
RTSOP
93.89
24.64
90%
CY62256N
1.77 V
10%
Max
10
10
–
5
–
–
< 5 ns
Page 5 of 14
C/W
C/W
Unit
Unit
A
A
A
ns
ns
V
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