IDT70V25L25PFGI8 IDT, Integrated Device Technology Inc, IDT70V25L25PFGI8 Datasheet - Page 7

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IDT70V25L25PFGI8

Manufacturer Part Number
IDT70V25L25PFGI8
Description
IC SRAM 128KBIT 25NS 100TQFP
Manufacturer
IDT, Integrated Device Technology Inc
Datasheet

Specifications of IDT70V25L25PFGI8

Format - Memory
RAM
Memory Type
SRAM - Dual Port, Asynchronous
Memory Size
128K (8K x 16)
Speed
25ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
70V25L25PFGI8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IDT70V25L25PFGI8
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
2. V
NOTE:
1. At V
Absolute Maximum Ratings
Capacitance
NOTES:
1. This parameter is determined by device characterization but is not production
2. C
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
V
T
T
T
I
OUT
BIAS
STG
JN
IDT70V35/34S/L (IDT70V25/24S/L)
High-Speed 3.3V 8/4K x 18 (8/4K x 16) Dual-Port Static RAM
Symbol
TERM
C
tested.
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
maximum, and is limited to < 20mA for the period of V
Symbol
Symbol
OUT
C
OUT
TERM
V
IN
|I
V
DD
|I
(2)
LO
LI
OL
OH
(2)
also references C
|
|
< 2.0V leakages are undefined.
must not exceed V
Input Capacitance
Output Capacitance
Under Bias
Storage
Junction Temperature
DC Output
Current
Terminal Voltage
with Respect
to GND
Temperature
Temperature
Input Leakage Current
Output Leakage Currentt
Output Low Voltage
Output High Voltage
Parameter
I
/
O
Rating
DD
(1)
.
+ 0.3V for more than 25% of the cycle time or 10ns
Parameter
(T
A
= +25°C, f = 1.0MHz)
(1)
(1)
Conditions
V
V
OUT
IN
Commercial
& Industrial
= 0V
-0.5 to +4.6
-55 to +125
-65 to +150
= 0V
+150
50
TERM
I
I
V
CE = V
(1)
OL
OH
DD
> V
= +4mA
= -4mA
Max.
= 3.6V, V
10
9
DD
IH
, V
+ 0.3V.
5624 tbl 04
5624 tbl 07
Unit
mA
Test Conditions
Unit
OUT
o
o
o
V
pF
pF
C
C
C
IN
= 0V to V
= 0V to V
6.42
7
Maximum Operating Temperature
and Supply Voltage
NOTE:
1. This is the parameter T
Recommended DC Operating
Conditions
NOTES:
1. V
2. V
Commercial
Industrial
Symbol
DD
V
V
DD
V
V
IL
TERM
DD
SS
IH
IL
(V
> -1.5V for pulse width less than 10ns.
Grade
DD
must not exceed V
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
= 3.3V ± 0.3V)
Industrial and Commercial Temperature Ranges
Parameter
70V35/34/25/24S
Min.
2.4
___
___
___
-40
A
0
Temperature
. This is the "instant on" case temperature.
O
DD
Ambient
C to +70
O
C to +85
+ 0.3V.
Max.
0.4
10
10
___
O
-0.3
C
O
Min.
C
3.0
2.0
0
(1)
(1)
70V35/34/25/24L
Min.
GND
2.4
___
___
___
Typ.
0V
0V
3.3
____
____
0
V
DD
Max.
3.3V
3.3V
Max.
0.4
___
3.6
0.8
+0.3
5
5
0
V
+
+
(2)
DD
0.3V
0.3V
5624 tbl 08
5624 tbl 05
5624 tbl 06
Unit
µ A
µ A
Unit
V
V
V
V
V
V

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