M29F032D70N6T NUMONYX, M29F032D70N6T Datasheet - Page 27

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M29F032D70N6T

Manufacturer Part Number
M29F032D70N6T
Description
IC FLASH 32MBIT 70NS 40TSOP
Manufacturer
NUMONYX
Datasheet

Specifications of M29F032D70N6T

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
32M (4M x 8)
Speed
70ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
40-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-1702-2
Table 19. CFI Query System Interface Information
Note: 1. Not supported in the CFI
Address
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
Data
45h
55h
00h
00h
04h
00h
0Ah
00h
04h
00h
03h
00h
V
V
V
00h not supported
V
00h not supported
Typical timeout per single byte program = 2
Typical timeout for minimum size write buffer program = 2
Typical timeout per individual block erase = 2
Typical timeout for full chip erase = 2
Maximum timeout for byte program = 2
Maximum timeout for write buffer program = 2
Maximum timeout per individual block erase = 2
Maximum timeout for chip erase = 2
CC
CC
PP
PP
bit 7 to 4
bit 3 to 0
bit 7 to 4
bit 3 to 0
[Programming] Supply Minimum Program/Erase voltage
[Programming] Supply Maximum Program/Erase voltage
Logic Supply Minimum Program/Erase voltage
Logic Supply Maximum Program/Erase voltage
BCD value in volts
BCD value in 100 mV
BCD value in volts
BCD value in 100 mV
Description
n
n
times typical
ms
n
times typical
n
µs
n
n
ms
times typical
n
times typical
n
µs
see note (1)
see note (1)
M29F032D
256µs
Value
16µs
4.5V
5.5V
NA
NA
NA
NA
1s
8s
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