M48Z35AV-10MH6F STMicroelectronics, M48Z35AV-10MH6F Datasheet

IC NVSRAM 256KBIT 100NS 28SOIC

M48Z35AV-10MH6F

Manufacturer Part Number
M48Z35AV-10MH6F
Description
IC NVSRAM 256KBIT 100NS 28SOIC
Manufacturer
STMicroelectronics
Datasheet

Specifications of M48Z35AV-10MH6F

Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
256K (32K x 8)
Speed
100ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
28-SOIC, 28-SOH (8.48mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4727-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M48Z35AV-10MH6F
Manufacturer:
ST
0
Features
October 2010
This is information on a product still in production but not recommended for new designs.
Integrated, ultra low power SRAM, power-fail
control circuit, and battery
READ cycle time equals WRITE cycle time
Battery low flag (BOK)
Automatic power-fail chip deselect and WRITE
protection
WRITE protect voltage:
(V
– M48Z35AV: 2.7 V ≤ V
Self-contained battery in the CAPHAT
package
Packaging includes a 28-lead SOIC and
SNAPHAT
Pin and function compatible with JEDEC
standard 32 Kbit x 8 SRAMs
SOIC package provides direct connection for a
SNAPHAT
RoHS compliant
– Lead-free second level interconnect
PFD
= Power-fail deselect voltage)
5.0 V or 3.3 V, 256 Kbit (32 Kbit x 8) ZEROPOWER
®
®
top (to be ordered separately)
top which contains the battery
PFD
≤ 3.0 V
Doc ID 6784 Rev 8
DIP
28
28
Battery CAPHAT™
SNAPHAT
PCDIP28 (PC)
1
SOH28 (MH)
Not recommended for new design
battery
1
®
(SH)
M48Z35AV
®
SRAM
www.st.com
1/25
1

Related parts for M48Z35AV-10MH6F

M48Z35AV-10MH6F Summary of contents

Page 1

... Battery low flag (BOK) ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltage Power-fail deselect voltage) PFD – M48Z35AV: 2.7 V ≤ V PFD ■ Self-contained battery in the CAPHAT package ■ Packaging includes a 28-lead SOIC and ® SNAPHAT top (to be ordered separately) ■ ...

Page 2

... Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Operating modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.1 READ mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.2 WRITE mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2.3 Data retention mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2.4 V noise and negative going transients . . . . . . . . . . . . . . . . . . . . . . . . . Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 7 Environmental information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 2/25 Doc ID 6784 Rev 8 M48Z35AV ...

Page 3

... M48Z35AV List of tables Table 1. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Table 2. Operating modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Table 3. READ mode AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Table 4. WRITE mode AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Table 5. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Table 6. Operating and AC measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Table 7. Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Table 8. DC characteristics Table 9. Power down/up AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Table 10. Power down/up trip points DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Table 11. PMDIP28 – ...

Page 4

... SOH28 – 28-lead plastic small outline, battery SNAPHAT Figure 14. SH – 4-pin SNAPHAT Figure 15. SH – 4-pin SNAPHAT Figure 16. Recycling symbols . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 4/25 ® housing for 48 mAh battery, package outline . . . . . . . . . . . . . . . . 20 ® housing for 120 mAh battery, package outline . . . . . . . . . . . . . . . 21 Doc ID 6784 Rev 8 M48Z35AV ® , pack. outline ...

Page 5

... The M48Z35AV is a non-volatile pin and function equivalent to any JEDEC standard SRAM. It also easily fits into many ROM, EPROM, and EEPROM sockets, providing the non-volatility of PROMs without any requirement for special WRITE timing or limitations on the number of WRITEs that can be performed ...

Page 6

... Ground A14 A12 A13 A11 M48Z35AV A10 DQ7 DQ0 11 18 DQ6 DQ1 12 17 DQ5 DQ2 13 16 DQ4 DQ3 A14 A12 A13 A11 M48Z35AV A10 DQ7 DQ0 11 18 DQ6 DQ1 12 17 DQ5 DQ2 13 16 DQ4 DQ3 Doc ID 6784 Rev 8 M48Z35AV AI02782B AI02783 ...

Page 7

... M48Z35AV Figure 4. Block diagram LITHIUM CELL POWER VOLTAGE SENSE AND V PFD SWITCHING CIRCUITRY V CC Doc ID 6784 Rev 8 Description A0-A14 DQ0-DQ7 32K x 8 SRAM ARRAY AI01619B 7/25 ...

Page 8

... SO 2.1 READ mode The M48Z35AV is in the READ mode whenever W (WRITE enable) is high, E (chip enable) is low. The device architecture allows ripple-through access of data from eight of 264,144 locations in the static storage array. Thus, the unique address specified by the 15 address inputs defines which one of the 32,768 bytes of data accessed. Valid data will be available at the data I/O pins within address access time (t signal is stable, providing that the E and G access times are also satisfied ...

Page 9

... Valid for ambient operating temperature (see Figure 10 on page L tAVAV VALID tAVQV tELQV tELQX tGLQV tGLQX (1) Parameter = ° 3.0 to 3.6 V (except where noted 15). Doc ID 6784 Rev 8 Operating modes tAXQX tEHQZ tGHQZ VALID AI00925 M48Z35AV –100 Unit Min Max 100 ns 100 ns 100 9/25 ...

Page 10

... Operating modes 2.2 WRITE mode The M48Z35AV is in the WRITE mode whenever W and E are low. The start of a WRITE is referenced from the latter occurring falling edge WRITE is terminated by the earlier rising edge The addresses must be held valid throughout the cycle must return high for a minimum the initiation of another READ or WRITE cycle ...

Page 11

... V of the power supply lines is recommended. When V drops below V CC preserves data. The internal button cell will maintain data in the M48Z35AV for an accumulated period of at least 10 years (at 25°C) when V As system power returns and V power supply is switched to external V V ...

Page 12

... AT ANY ADDRESS WRITE DATA COMPLEMENT BACK TO SAME ADDRESS READ DATA AT SAME ADDRESS AGAIN IS DATA NO (BATTERY LOW) COMPLEMENT OF FIRST READ? NOTIFY SYSTEM (BATTERY OK) YES OF LOW BATTERY (DATA MAY BE CORRUPTED) WRITE ORIGINAL DATA BACK TO SAME ADDRESS CONTINUE Doc ID 6784 Rev 8 M48Z35AV Figure 8 AI00607 ...

Page 13

... M48Z35AV 2.4 V noise and negative going transients CC I transients, including those produced by output switching, can produce voltage CC fluctuations, resulting in spikes on the V capacitors are used to store energy which stabilizes the V bypass capacitors will be released as low going spikes are generated or energy will be absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1 µF (see is recommended in order to provide the needed filtering ...

Page 14

... Negative undershoots below –0.3 V are not allowed on any pin while in the battery backup mode. Caution: Do NOT wave solder SOIC to avoid damaging SNAPHAT 14/25 Parameter SNAPHAT off, oscillator off) CAPHAT CC SOH28 ® sockets. Doc ID 6784 Rev 8 M48Z35AV Value Unit °C ® top – °C ® DIP – °C –55 to 125 ° ...

Page 15

... Load capacitance (C Input rise and fall times Input pulse voltages Input and output timing ref. voltages Note: Output Hi-Z is defined as the point where data is no longer driven. Figure 10. AC measurement load circuit Note for M48Z35AV. Table 7. Capacitance Symbol C Input capacitance IN (3) ...

Page 16

... RECOGNIZED VALID Doc ID 6784 Rev 8 (1) Min Max ≤ V ± ≤ V ±5 OUT – 0 –0.3 0.8 2 0.3 CC 0.4 = –1 mA 2.4 = 3.0 to 3.6 V (except where noted tRB tDR DON'T CARE HIGH-Z (PER CONTROL INPUT) M48Z35AV Unit µA µ trec RECOGNIZED VALID AI01168C ...

Page 17

... M48Z35AV Table 9. Power down/up AC characteristics Symbol ( PFD ( PFD PFD rec PFD 1. Valid for ambient operating temperature (max PFD PFD until 200 µs after (min PFD SS Table 10. Power down/up trip points DC characteristics Symbol V Power-fail deselect voltage PFD V Battery backup switchover voltage SO (3) ...

Page 18

... Doc ID 6784 Rev 8 M48Z35AV C eA PCDIP inches Typ Min Max 0.350 0.380 0.015 0.030 0.330 0.350 0.015 0.021 0.045 0.070 0.008 0.012 1.550 1 ...

Page 19

... M48Z35AV Figure 13. SOH28 – 28-lead plastic small outline, battery SNAPHAT B Note: Drawing is not to scale. Table 12. SOH28 – 28-lead plastic small outline, battery SNAPHAT data Symbol Typ Min Max 3.05 0.05 0.36 2.34 2.69 0.36 0.51 0.15 0.32 17.71 18.49 8.23 8.89 1.27 – ...

Page 20

... Typ Min Max 9.78 6.73 7.24 6.48 6.99 0.38 0.46 0.56 21.21 21.84 14.22 14.99 15.55 15.95 3.20 3.61 2.03 2.29 Doc ID 6784 Rev 8 M48Z35AV inches Typ Min 0.385 0.265 0.285 0.255 0.275 0.015 0.018 0.022 0.835 0.860 0.560 0.590 0.612 ...

Page 21

... M48Z35AV Figure 15. SH – 4-pin SNAPHAT Note: Drawing is not to scale. Table 14. SH – 4-pin SNAPHAT Symb ® housing for 120 mAh battery, package outline ® housing for 120 mAh battery, pack. mech. data mm Typ Min Max 10.54 8.00 8.51 7.24 8.00 ...

Page 22

... M4Z28-BR00SH1 M4Z32-BR00SH1 22/25 M48Z 35AV = 2.7 to 3.0 V PFD ® ), tubes ® ), tape & reel ® battery package which is ordered separately under Table 16). ® Description Lithium battery (48 mAh) SNAPHAT Lithium battery (120 mAh) SNAPHAT Doc ID 6784 Rev 8 M48Z35AV – Package ® SH ® SH ...

Page 23

... M48Z35AV 7 Environmental information Figure 16. Recycling symbols This product contains a non-rechargeable lithium (lithium carbon monofluoride chemistry) button cell battery fully encapsulated in the final product. Recycle or dispose of batteries in accordance with the battery manufacturer's instructions and local/national disposal and recycling regulations. Please refer to the following web site address for additional information regarding compliance statements and waste recycling www.st.com/nvram, then select " ...

Page 24

... Section 7: Environmental Device is not recommended for new design; updated 8 reformatted document. Doc ID 6784 Rev 8 Changes (Table 10) (Table 15) (Table 5) (Table 5) (Table 5) (Table 10) (Table 5, 15) Section 5: Package mechanical and 16. Section 5: Package mechanical information; minor reformatting. Table M48Z35AV (Table data; data; added 5, 11, 15; ...

Page 25

... M48Z35AV Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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