m48z35av-70pc6tr STMicroelectronics, m48z35av-70pc6tr Datasheet

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m48z35av-70pc6tr

Manufacturer Part Number
m48z35av-70pc6tr
Description
5.0v Or 3.3v, 256kbit 32kbit X 8 Zeropower Sram
Manufacturer
STMicroelectronics
Datasheet
Features
November 2007
Integrated, ultra low power SRAM, power-fail
control circuit, and battery
READ cycle time equals WRITE cycle time
Battery low flag (BOK)
Automatic power-fail chip deselect and WRITE
protection
WRITE protect voltage:
(V
– M48Z35AV: 2.7V
Self-contained battery in the CAPHAT™ DIP
package
Packaging includes a 28-lead SOIC and
SNAPHAT
Pin and function compatible with JEDEC
standard 32Kbit x 8 SRAMs
SOIC package provides direct connection for a
SNAPHAT top which contains the battery
RoHS compliant
PFD
Lead-free second level interconnect
= Power-fail deselect voltage)
®
5.0V or 3.3V, 256Kbit (32Kbit x 8) ZEROPOWER
top (to be ordered separately)
V
PFD
3.0V
Rev 6
28
28
Battery CAPHAT
SNAPHAT (SH)
PCDIP28 (PC)
SOH28 (MH)
1
battery
1
M48Z35AV
®
SRAM
www.st.com
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1

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m48z35av-70pc6tr Summary of contents

Page 1

... Battery low flag (BOK) ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltage Power-fail deselect voltage) PFD – M48Z35AV: 2.7V V PFD ■ Self-contained battery in the CAPHAT™ DIP package ■ Packaging includes a 28-lead SOIC and ® SNAPHAT top (to be ordered separately) ■ ...

Page 2

Contents 1 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

List of tables Table 1. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 4

List of figures Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 5

... The M48Z35AV is a non-volatile pin and function equivalent to any JEDEC standard 32K x8 SRAM. It also easily fits into many ROM, EPROM, and EEPROM sockets, providing the non-volatility of PROMs without any requirement for special WRITE timing or limitations on the number of WRITEs that can be performed. The 28 pin 600mil DIP CAPHAT™ ...

Page 6

... DQ4 DQ3 AI02782B A14 A12 A13 A11 M48Z35AV A10 DQ7 DQ0 11 18 DQ6 DQ1 12 17 DQ5 DQ2 13 16 DQ4 DQ3 AI02783 ...

Page 7

Figure 4. Block diagram LITHIUM CELL VOLTAGE SENSE SWITCHING POWER AND V PFD CIRCUITRY V CC A0-A14 DQ0-DQ7 32K x 8 SRAM ARRAY AI01619B 7/24 ...

Page 8

... SO 2.1 Read mode The M48Z35AV is in the READ Mode whenever W (WRITE Enable) is high, E (Chip Enable) is low. The device architecture allows ripple-through access of data from eight of 264,144 locations in the static storage array. Thus, the unique address specified by the 15 Address Inputs defines which one of the 32,768 bytes of data accessed. Valid data will be available at the Data I/O pins within Address Access time (t signal is stable, providing that the E and G access times are also satisfied ...

Page 9

... Write mode The M48Z35AV is in the WRITE Mode whenever W and E are low. The start of a WRITE is referenced from the latter occurring falling edge WRITE is terminated by the earlier rising edge The addresses must be held valid throughout the cycle must return high for a minimum of t prior to the initiation of another READ or WRITE cycle ...

Page 10

WRITE cycles to avoid bus contention; although, if the output bus has been activated by a low on E and G, a low on W will disable the outputs t Figure 6. Write enable controlled, write mode AC waveforms A0-A14 ...

Page 11

... V of the power supply lines is recommended. When V drops below V CC preserves data. The internal button cell will maintain data in the M48Z35AV for an accumulated period of at least 10 years (at 25°C) when V As system power returns and V power supply is switched to external V V ...

Page 12

Also rises, the battery voltage is checked. If the voltage is less than approximately CC 2.5V, an internal Battery Not OK (BOK) flag will be set. The BOK flag can be checked after power up. If the BOK ...

Page 13

V noise and negative going transients CC I transients, including those produced by output switching, can produce voltage CC fluctuations, resulting in spikes on the V capacitors are used to store energy which stabilizes the V bypass capacitors will ...

Page 14

... These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. Table 5. ...

Page 15

... Load capacitance (C Input rise and fall times Input pulse voltages Input and output timing ref. voltages Note: Output Hi-Z is defined as the point where data is no longer driven. Figure 10. AC measurement load circuit Note: 50pF for M48Z35AV. Table 7. Capacitance Symbol C Input capacitance IN (3) ...

Page 16

Table 8. DC characteristics Symbol Parameter (2) I Input leakage current LI ((2) I Output leakage current LO I Supply current CC I Supply current (TTL standby) CC1 I Supply current (CMOS standby) CC2 V Input low voltage IL V ...

Page 17

Table 10. Power down/up trip points DC characteristics Symbol Parameter V Power-fail deselect voltage PFD V Battery back-up switchover voltage SO (3) t Expected data retention time DR 1. All voltages referenced Valid for ambient ...

Page 18

Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second Level Interconnect is marked on the package and on the inner ...

Page 19

Figure 13. SOH28 – 28-lead plastic small outline, battery SNAPHAT, package outline B Note: Drawing is not to scale. Table 12. SOH28 – 28-lead plastic small outline, battery SNAPHAT, pack. mech. data Symbol Typ ...

Page 20

Figure 14. SH – 4-pin SNAPHAT housing for 48mAh battery, package outline Note: Drawing is not to scale. Table 13. SH – 4-pin SNAPHAT housing for 48mAh battery, pack. mech. data Symbol Typ ...

Page 21

Figure 15. SH – 4-pin SNAPHAT housing for 120mAh battery, package outline Note: Drawing is not to scale. Table 14. SH – 4-pin SNAPHAT housing for 120 mAh battery, pack. mech. data Symb Typ ...

Page 22

Part numbering Table 15. Ordering information scheme Example: Device type M48Z Supply voltage and write protect voltage 35AV = V = 3.0 to 3.6V Speed –10 = 100ns (35AV) Package PC = PCDIP28 ( SOH28 ...

Page 23

Revision history Table 17. Document revision history Date Revision Sep-1999 1.0 20-Apr-2000 1.1 22-Jun-2001 2.0 05-Jul-2001 2.1 17-Dec-2001 2.2 29-May-2002 2.3 03-Oct-2002 2.4 07-Nov-2002 2.5 02-Apr-2003 3.0 24-Mar-2004 4.0 09-Jun-2005 05-Nov-2007 First Issue SH and SH28 packages for 2-pin ...

Page 24

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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