m48z35av-70pc6tr STMicroelectronics, m48z35av-70pc6tr Datasheet - Page 13

• Manufacturer Part Number: m48z35av-70pc6tr
• Description: 5.0v Or 3.3v, 256kbit 32kbit X 8 Zeropower Sram
• Manufacturer: STMicroelectronics

2.4
V
I
fluctuations, resulting in spikes on the V
capacitors are used to store energy which stabilizes the V
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1µF (see
is recommended in order to provide the needed filtering.
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, ST recommends connecting a schottky
diode from V
is recommended for through hole and MBRS120T3 is recommended for surface mount).
Figure 9.
CC
CC
transients, including those produced by output switching, can produce voltage
noise and negative going transients
CC
Supply voltage protection
to V
SS
(cathode connected to V
V CC
0.1 F
CC
CC
that drive it to values below V
bus. These transients can be reduced if
CC
, anode to V
V CC
V SS
DEVICE
CC
bus. The energy stored in the
AI02169
SS
). (Schottky diode 1N5817
SS
by as much as
Figure
13/24
9)