M48Z35AV-10MH6F STMicroelectronics, M48Z35AV-10MH6F Datasheet - Page 17

• Manufacturer Part Number: M48Z35AV-10MH6F
• Description: IC NVSRAM 256KBIT 100NS 28SOIC
• Manufacturer: STMicroelectronics

Specifications of M48Z35AV-10MH6F

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 256K (32K x 8)
• Speed: 100ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SOIC, 28-SOH (8.48mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4727-2

M48Z35AV
Table 9.
1. Valid for ambient operating temperature: T
2. V
3. V
Table 10.
1. All voltages referenced to V
2. Valid for ambient operating temperature: T
3. At 25 °C, V
Symbol
Symbol
until 200 µs after V
t
V
t
DR
V
PFD
PFD
t
FB
t
t
t
PFD
F
PD
t
RB
rec
SO
R
(2)
(3)
(3)
(min) to V
(max) to V
CC
Power-fail deselect voltage
Battery backup switchover voltage
Expected data retention time
Power down/up AC characteristics
Power down/up trip points DC characteristics
E or W at V
V
V
V
V
V
PFD
PFD
PFD
SS
PFD
= 0 V.
SS
PFD
to V
fall time of less than t
CC
(max) to V
(min) to V
(min) to V
(max) to inputs recognized
(min) fall time of less than t
passes V
PFD
Parameter
IH
(min) V
SS
before power down
.
SS
PFD
PFD
Parameter
PFD
V
Doc ID 6784 Rev 8
(max) V
CC
CC
(min) V
(min).
(1)(2)
fall time
rise time
FB
A
A
may cause corruption of RAM data.
CC
(1)
CC
= 0 to 70 °C; V
= 0 to 70 °C; V
rise time
fall time
F
may result in deselection/write protection not occurring
CC
CC
Min
2.7
10
= 3.0 to 3.6 V (except where noted).
= 3.0 to 3.6 V (except where noted).
V
Min
PFD
300
10
10
40
0
1
– 100 mV
Typ
2.9
DC and AC parameters
Max
200
Max
3.0
Unit
ms
µs
µs
µs
µs
µs
Years
Unit
V
V
17/25