CY7C1021CV33-12VXI Cypress Semiconductor Corp, CY7C1021CV33-12VXI Datasheet - Page 6

• Manufacturer Part Number: CY7C1021CV33-12VXI
• Description: IC SRAM 1MBIT 12NS 44SOJ
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1021CV33-12VXI

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (64K x 16)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-SOJ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Characteristics
Over the Operating Range
Notes
Document Number: 38-05132 Rev. *H
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Write Cycle
t
t
t
t
t
t
t
t
t
t
t
5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, and input pulse levels of 0 to 3.0V.
6. t
7. At any given temperature and voltage condition, t
8. t
9. This parameter is guaranteed by design and is not tested.
10. The internal write time of the memory is defined by the overlap of CE LOW, WE LOW, and BHE/BLE LOW. CE, WE, and BHE/BLE is LOW to initiate a write. The
power
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
DBE
LZBE
HZBE
WC
SCE
AW
HA
SA
PWE
SD
HD
LZWE
HZWE
BW
Parameter
[9]
[9]
steady state voltage.
transition of these signals terminate the write. The input data setup and hold timing is referenced to the leading edge of the signal that terminates the write.
POWER
HZOE
[6]
, t
HZBE
gives the minimum amount of time that the power supply is at typical V
[10]
, t
HZCE
V
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power Up
CE HIGH to Power Down
Byte Enable to Data Valid
Byte Enable to Low Z
Byte Disable to High Z
Write Cycle Time
CE LOW to Write End
Address Setup to Write End
Address Hold from Write End
Address Setup to Write Start
WE Pulse Width
Data Setup to Write End
Data Hold from Write End
WE HIGH to Low Z
WE LOW to High Z
Byte Enable to End of Write
CC
, and t
(Typical) to the First Access
HZWE
Description
[5]
are specified with a load capacitance of 5 pF as in part (d) of
[7]
[7]
[7, 8]
[7]
[7, 8]
[7, 8]
HZCE
is less than t
Min
100
8
3
0
3
0
0
8
7
7
0
0
6
5
0
3
6
LZCE
-8
, t
HZOE
Max
8
8
5
4
4
8
5
4
4
CC
is less than t
values until the first memory access is performed.
Min
100
10
10
3
0
3
0
0
8
8
0
0
7
5
0
3
7
LZOE
-10
AC Test Loads and
, and t
Max
10
10
10
5
5
5
5
5
5
HZWE
is less than t
Min
100
12
12
3
0
3
0
0
9
9
0
0
8
6
0
3
8
Waveforms. Transition is measured ±500 mV from
-12
Max
LZWE
12
12
12
6
6
6
6
6
6
for any given device.
CY7C1021CV33
Min
100
15
15
10
10
10
3
0
3
0
0
0
0
8
0
3
9
-15
Max
15
15
15
7
7
7
7
7
7
Page 6 of 14
Unit
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns