CY7C199C-20ZXIT Cypress Semiconductor Corp, CY7C199C-20ZXIT Datasheet - Page 8

IC SRAM 256KBIT 20NS 28TSOP

CY7C199C-20ZXIT

Manufacturer Part Number
CY7C199C-20ZXIT
Description
IC SRAM 256KBIT 20NS 28TSOP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C199C-20ZXIT

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
256K (32K x 8)
Speed
20ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
28-TSOP I
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document #: 38-05408 Rev. *B
Timing Waveforms
Write Cycle No. 1 (WE Controlled)
Write Cycle No. 2 (CE Controlled)
Notes:
13. This cycle is WE controlled, OE is HIGH during write.
14. Data In/Out is high impedance if OE = V
15. During this period the I/Os are in output state and input signals should not be applied.
16. This cycle is CE controlled.
17. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
Data In/Out
Data In/Out
Address
Address
WE
WE
OE
CE
CE
Undefined
see footnotes
High Z
(continued)
[14, 16, 17]
[13, 14, 15]
IH
t
.
t
HZOE
SA
t
SA
t
AW
t
SCE
t
AW
Data-In Valid
t
t
WC
WC
Data-In Valid
t
t
t
SD
PWE
SD
t
SCE
t
t
HA
HD
t
HD
t
HA
CY7C199C
High Z
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